IS49RL18320-125EBL

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The IS49RL18320-125EBL is classified as a Memory because it provides a non-volatile solution for application which require memories with a high density of embedded logic. The use of this memory allows for the integration of firmware, system information, and data related functions in the same device.

This device is available in two versions: SOP and BGA. The SOP version is suited for cost-sensitive applications and is also compatible with both high-speed and low-speed processing devices. The BGA version is better suited for applications with higher data speeds and tight circuit requirements.

The IS49RL18320-125EBL is a generational device utilizing advanced technologies to provide superior performance and reliability. It is designed with a 25ns read cycle, allowing for a fast response time. The high-density 64K×32 non-volatile SRAM array is configured in a 16-bit bus and has been optimized for superior memory performance.

The IS49RL18320-125EBL also features a non-volatile EPROM block. This is used to store system and software firmware that remain intact during power recycling. The EPROM can be programmed using standard flash memory devices, making loading new software easier and faster.

The device also includes a SRAM-controlled ROM for storing initialization and reset vectors. This ROM block is configured to minimize system power consumption when executing from the ROM and can be used to store up to 32K program words.

The working principle of the IS49RL18320-125EBL is based on non-volatile SRAM architecture which consists of a pair of cells consisting of positive latches and negative latches. Each pair of cells is configured in a cross-coupled structure, with the negative latch connected in series with the positive latch. When power is applied, the voltage present on the two cells is identical, resulting in a neutral state. When data is written, the voltage on one of the cells is changed with respect to the other cell. This causes the latch to flip its logic status and store the data. For data to be read from the memory, the voltage on the cells is read and the logic status can be determined. When power is removed from the device, the data stored in the memory is preserved, and is available for retrieval when power is applied again.

The IS49RL18320-125EBL is well-suited for use in a wide range of applications where memory density and performance are required. These applications range from automotive to telecommunications. Additionally, it can be used in applications where data needs to be stored non-volatile and are not affected by power cycles. In conclusion, the IS49RL18320-125EBL is an advanced memory solution that provides high-density non-volatile memory and advanced features to meet the demands of a wide variety of applications. It features a 25ns read cycle, high-density SRAM array, and a non-volatile EPROM block, providing both performance and reliability. Additionally, the SRAM-controlled ROM can be used to store initialization and reset vectors, adding durability and reliability to the memory solution. With its broad range of applications and features, the IS49RL18320-125EBL is an ideal choice for a number of different memory applications.

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