70T3319S133BC Allicdata Electronics
Allicdata Part #:

70T3319S133BC-ND

Manufacturer Part#:

70T3319S133BC

Price: $ 77.92
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 256CABGA
More Detail: SRAM - Dual Port, Synchronous Memory IC 4.5Mb (256...
DataSheet: 70T3319S133BC datasheet70T3319S133BC Datasheet/PDF
Quantity: 1000
12 +: $ 70.83650
Stock 1000Can Ship Immediately
$ 77.92
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 4.5Mb (256K x 18)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: --
Access Time: 4.2ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)
Base Part Number: IDT70T3319
Description

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Memory

70T3319S133BC is a type of memory products, it is used in various electronic products. This article will discuss the application field and working principle of 70T3319S133BC.

Application

70T3319S133BC is a type of dynamic random access memory (DRAM), more specifically it is a double data rate synchronous DRAM. This memory product has relatively large capacity, it is usually used in high performance computers, servers, network communication devices and other products which need large capacity and high speed operation. It is also widely used in the embedded products, mobile devices and portable devices.

In particular, 70T3319S133BC could provides a maximum capacity of 2GB, a data transfer rate of 133MHz, a power voltage of 2.5V and an operating temperature range from -25°C to +85°C. Thus, these features make 70T3319S133BC suitable for the industries which require high reliability of products, such as aerospace, medical, military and other industries.

Working Principle

The working principle of 70T3319S133BC is similar to other types of DRAM. It is composed of many cells arranged in a regular array. Those cells are interconnected by row and column decoders. A row decoder is used to select a row and a column decoder is used to select a column. Each cell can store one bit of data. That bit of data can be accessed by using the row and column decoders.The data is stored in the memory cell are in the form of electrical charge on a capacitive element. By controlling the charge, 70T3319S133BC can store either a “1” or a “0”. If a row and a column are selected and then asserted, the cell’s contents will be read from the output line.

The operation speed of a memory is important to ensure the efficacy of a computer system. 70T3319S133BC provides a data transfer rate of 133MHz, it is much faster than the conventional DRAM products. Also, it provides a smaller power consumption and can operate on a lower power voltage. These features not only can reduce the energy consumption and lower the cost of a memory, but also can improve the reliability and longevity of the device.

Conclusion

In conclusion, 70T3319S133BC could be used in various electronic device applications. It provides high capacity, high speed, low power consumption, reliable operation and so on. Moreover, it is suitable for industries with high reliability of products. Combined to its working principle, 70T3319S133BC make an attractive choice for high performance system designs.

The specific data is subject to PDF, and the above content is for reference

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