70T3599S133BC Allicdata Electronics
Allicdata Part #:

70T3599S133BC-ND

Manufacturer Part#:

70T3599S133BC

Price: $ 77.92
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 256CABGA
More Detail: SRAM - Dual Port, Synchronous Memory IC 4.5Mb (128...
DataSheet: 70T3599S133BC datasheet70T3599S133BC Datasheet/PDF
Quantity: 1000
12 +: $ 70.83650
Stock 1000Can Ship Immediately
$ 77.92
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 4.5Mb (128K x 36)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: --
Access Time: 4.2ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)
Base Part Number: IDT70T3599
Description

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Memory: 70T3599S133BC Application Field and Working Principle

The 70T3599S133BC is a type of memory device specifically designed for professional grade applications. It is particularly used in the telecommunications and control system industries. This type of memory offers unparalleled speed and capability with support for a wide range of dynamic word size and density.

A 70T3599S133BC is a memory device that uses dynamic random access memory (DRAM) to store data and carry out program instructions. DRAM is a type of memory chip that requires a periodic refreshing of its cells in order to retain data. Unlike static RAM, DRAM can store a limited amount of data over a longer period of time. It is one of the most common types of memory used in today\'s electronic products due to its affordability, low power consumption, and stability.

The 70T3599S133BC is an extremely fast memory device with an access time of 9.6ns and burst mode data transfer rate of 25MHz. This makes it ideal for high speeds applications such as next generation smartphones, modern commercial aircraft, and advanced computer systems. It also has a wide range of word size and density options, allowing it to cater to different system requirements.

The 70T3599S133BC is a reliable and cost-effective DRAM solution. It uses a special dielectric isolation technique, allowing it to increase the memory’s density without sacrificing its performance. This type of memory is also designed with a built-in ECC, which enables it to detect any errors and correct them. Its highly reliable operation ensures a stable performance, even under extreme operating conditions.

The 70T3599S133BC is a versatile memory device that can be used for a wide variety of applications. It provides a high data rate and reliable operating conditions, making it ideal for tough, high performance applications. Its wide range of word size and density capabilities enable it to be used for specialized applications such as networking, communications, and control systems. Additionally, its low power consumption, price competitiveness, and enhanced features make it the perfect choice for high-end mobile and embedded devices.

In conclusion, the 70T3599S133BC is an exceptional memory device that is designed to meet the demands of professional grade applications. It offers high performance, reliability, and cost-effectiveness in a variety of operating conditions. With its wide range of word size and density options, the 70T3599S133BC can meet the needs of any demanding application.

The specific data is subject to PDF, and the above content is for reference

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