70T3519S166BF

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Synchronous
Memory Size:	9Mb (256K x 36)
Clock Frequency:	166MHz
Write Cycle Time - Word, Page:	--
Access Time:	3.6ns
Memory Interface:	Parallel
Voltage - Supply:	2.4 V ~ 2.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	208-LFBGA
Supplier Device Package:	208-CABGA (15x15)
Base Part Number:	IDT70T3519

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Introduction to Memory and 70T3519S166BF

Memory or storage is an essential component of computers, controlling the input, output, accessing and manipulation of data. Memory can be classified into different types, such as volatile and non-volatile memory, dynamic random access memory (DRAM), static random access memory (SRAM), read-only memory (ROM) and so on. Among all these types, SRAM is often used in applications where fast access time, low power consumption and high data rate are desired. The 70T3519S166BF is a type of SRAM developed by the memory division at SK Hynix Semiconductor, a multinational electronics manufacturer based in South Korea.

The 70T3519S166BF Application Field

The 70T3519S166BF is a 1G-bit SRAM with a data width of 32 bits. It is widely used in applications such as imaging, medical, automotive, communication and industrial. In imaging applications, the 70T3519S166BF is used in digital cameras to store large amounts of RAW image data and help with image capturing and file storage. In medical applications, it is used to process large amounts of data in medical instruments and modify specified parameters like frequency and voltage. In automotive application, the SRAM provides a fast random access memory to support the high-speed operation of multiple control units. In communication applications, 70T3519S166BF can be used to store data for network application and it helps to enhance data processing speed. In industrial applications, 70T3519S166BF is used as a secondary memory for high-end monitoring system.

The 70T3519S166BF Working Principle

The working principle of SRAM is based on a circuit that consists of four transistors and two resistor pairs. The transistors are used for the controlled integration and release of charge. The two resistors are used to intercept a potential difference between the two core nodes of the circuit. This potential difference is then used to perform the read and write operations.When reading, the voltage of the two nodes is compared to the voltage reference. If they are equal, the word line is driven to the low level, and the bit line is enabled. This allows the data stored at that address to be read from the bit line. If the voltage of the two nodes is different, the read fails and no data is obtained.When writing, a certain voltage is applied to the selected bit line, which causes an imbalance in the potential difference between the two nodes. This voltage is then amplified and a small current is allowed to flow through the circuit, which is then used to store the data at the given address.

Conclusion

The 70T3519S166BF is a 1G SRAM that is widely used in imaging, medical, automotive, communication and industrial applications. It supports a data width of 32 bits and has a high speed operation. The working principle of the 70T3519S166BF is based on the use of transistors and two resistors in a circuit. A potential difference is established between the two nodes and then used to perform read and write operations.

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