AT49LV001-90TC

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH
Memory Size:	1Mb (128K x 8)
Write Cycle Time - Word, Page:	50µs
Access Time:	90ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TC)
Mounting Type:	Surface Mount
Package / Case:	32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	32-TSOP
Base Part Number:	AT49LV001

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Introduction

An AT49LV001-90TC is a non-volatile flash memory device used to store data in computer systems. Non-volatile memory (NVM) is a type of data storage technology that does not lose its contents when power is turned off. As such, NVM is often used to maintain critical system configurations, store passwords and encryption keys, or retain BIOS settings. The AT49LV001-90TC is designed to offer high speeds and a low cost solution ideal for embedded applications.

Application Field of AT49LV001-90TC

AT49LV001-90TC is a high-speed Density Flash non-volatile storage device product by Atmel Corp. The product format is 96-pin TSOPII package and it is available in commercial, industrial, and automotive temperature range versions. Its capacity is 65536 Words (1 Megabit). AT49LV001-90TC is an ideal solution for applications where fast, low-power non-volatile data storage is required. The AT49LV001-90TC can be used as a code-memory target in applications such as microcontrollers, as a mass storage device in embedded systems and as a stand-alone memory device.The AT49LV001-90TC is also well-suited for medical instruments, automotive systems, security systems, handheld communication devices and any other system requiring fast, low-power non-volatile memory.

Working Principle of AT49LV001-90TC

The AT49LV001-90TC is composed of a large array of single-transistor memory cells, organized into an array of 16 bit words. Each cell contains a single non-volatile storage element. Writing to and reading from the AT49LV001-90TC happens in the same manner as any other AT49LV NVM type.The AT49LV001-90TC can be divided into three functional units:

• The Data Register, which feeds the data bits both into and out of the device.
• The Control Register, which controls and supervises all operations.
• The Flash Array, which contains the non-volatile cells.

A typical write operation involves the following sequence: The data to be stored is placed in the Data Register, the address is placed in the Control Register. The array is then programmed by applying a voltage to the selected word in the array. The programming voltage causes charge to be injected into the non-volatile memory cell forming a floating gate. The programming operation is monitored and controlled by the Control Register which ends the operation once the programming criteria is met.The AP49LV001-90TC supports both Fast and Slow random read modes of operation. In this mode, the address is placed in the Control Register and the Data Register then reads out the contents of the specified address.The AP49LV001-90TC supports erasing in both a single block and full-array mode. In single block erasing, the Control Register transmits the address of the desired erase block, the array is subjected to a high voltage, and the array is then monitored to verify that all cells in the erase block have been erased successfully. In full-array erasing the entire array is subject to the same high erased voltage.

Conclusion

The AT49LV001-90TC is a high-speed, low-cost solution for applications requiring fast, low-power non-volatile storage. It is ideal for applications such as medical instruments, automotive systems, security systems, handheld communication devices, and any other system requiring fast, low-power non-volatile memory. The AT49LV001-90TC is composed of an array of single-transistor memory cells, which are organized into an array of 16 bit words. The AT49LV001-90TC can support programming, erasing, and reading operations.

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