AT49LV1024-90VI

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Memory: AT49LV1024-90VI Application Field and Working Principle

AT49LV1024-90VI is a high-speed CMOS Static Random Access Memory (SRAM). The device is manufactured using Atmel\'s advanced high-speed CMOS technology. It has a power supply of 2.7V to 3.6V and uses advanced CMOS circuitry for very low power consumption. It offers a wide operating temperature range from -40°C to +85°C.

The AT49LV1024-90VI device is designed to provide memory capacity of 1024K bits (128K x 8 bits) that permits flexible addressing. The access time of the device is 90ns and it has an output enable (OE#) pin that allows memory to be enabled or disabled. The device is packaged in the standard TSOP-24 package for easy installation.

Application Field

The AT49LV1024-90VI is mainly used in applications such as automotive, industrial, and medical equipment, as well as embedded systems. As it offers low power consumption and wide operating temperature range, it is an ideal memory device for applications that require reliable storage an operation.

Working Principle

The AT49LV1024-90VI is an asynchronous SRAM, which means that it does not rely on an external clock signal to coordinate the operations of its memory cells. Instead, memory operations are controlled by the timing of voltage signals applied to the device\'s control inputs.The device receives commands from an external processor, which controls the timing of the control signals. The processor then applies the appropriate address and read/write control signals to the chip. In response, the device outputs the requested data from its memory cells.The memory contents are retained as long as the power supply is active. When the power supply is removed, the memory cells are reset and the device enters standby mode.The device includes built-in error checking and correction (ECC) circuitry that automatically checks data for errors when it is written to or read from memory. If an error is detected, the ECC circuitry will attempt to correct the data. This feature ensures that the data stored in the device is accurate and reliable.In order to write data to the device, the processor must first set the write enable (WE#) signal low. The processor then applies the appropriate address and data signals to the inputs, which are then latched internally. The processor then sets the write enable signal high and the data is written to the memory.In order to read data from the device, the processor must first set the output enable (OE#) signal low. The processor then applies the appropriate address signals, which are latched internally. The processor then sets the output enable signal high and the memory outputs the requested data.

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