MT48LC16M16A2P-75:D TR Integrated Circuits (ICs)

Memory technology is the basis for numerous applications in almost any given area of technology. Today, one of the most widely used memories is the MT48LC16M16A2P-75:D TR memory. This memory is used for many applications, including automotive, industrial, medical, computing, multimedia and communications. In this article, we will take a look at the application field and working principle of this memory.

Application Field and Working Principle

The MT48LC16M16A2P-75:D TR memory is an asynchronous static random access memory (SRAM). It is widely used in various applications and is a cost-effective way to store large amounts of data. This memory was developed by Toshiba, and is used in many devices, including personal digital assistants (PDAs), cell phones and portable computers.The MT48LC16M16A2P-75:D TR memory is designed for high speed and low power consumption. It has a fast access time, which is about 22 ns for reads and 16 ns for writes. The memory also has very low power consumption, consuming only 0.5 mA per MHz. This makes it ideal for applications that require energy efficiency or low power consumption.The MT48LC16M16A2P-75:D TR memory is based on a four-bit bus architecture. This architecture enables it to read or write multiple-words in a single clock cycle. It also provides a high data transfer rate, up to 75 MB per second.The MT48LC16M16A2P-75:D TR memory is composed of 16M×16 or 1GB of integrated circuit. Each chip can store up to 16M×16 bits of data and can be configured to either 8M×32 or 4M×64. The memory supports all three common memory sizes; 4M, 8M and 16M.This memory has several features, such as a low impedance open/closed drain cell structure, an internal burst counter and a low power self-refresh circuit. The open/closed drain cell structure enables the memory to quickly detect and react to changes in the system. The internal burst counter helps to speed up the addressing and reading/writing of data. The low power self-refresh circuit helps conserve energy while maintaining the memories integrity.In addition, this memory also has a low standby power/current rating of 0.5 μA/MHz and a temperature range of -40 °C to +85 °C. This memory is also resistant to electrostatic discharge (ESD) attacks, making it ideal for use in harsh environments. The MT48LC16M16A2P-75:D TR memory also has a low voltage rating of 1.65V, making it compatible with low voltage designs.

Conclusion

The MT48LC16M16A2P-75:D TR memory is a well-known memory that is used in a variety of applications. It is an asynchronous static random access memory (SRAM) designed for high speed and low power consumption. This memory has a four-bit bus architecture and supports four common memory sizes. It also has several features, such as a low impedance open/closed drain cell structure, an internal burst counter and a low power self-refresh circuit. In addition, it has a low voltage rating and is resistant to ESD attacks, making it ideal for harsh applications.

MT48FNX	Switchcraft ...	386.87 $	92	CONN PATCHBAY 48JACKS 1.7...
MT48K1NSX	Switchcraft ...	222.91 $	1000	CONN PATCHKIT 48JACKS 1.7...
MT48NNX	Switchcraft ...	337.44 $	1000	CONN PATCHBAY 48JACKS 1.7...
MT48HNX	Switchcraft ...	352.86 $	1000	CONN PATCHBAY 48JACKS 1.7...
MT48K1NNX	Switchcraft ...	413.11 $	1000	CONN PATCHKIT 48JACKS 1.7...
MT48K3NNX	Switchcraft ...	428.39 $	1000	CONN PATCHKIT 48JACKS 3.5...
MT48K1HNX	Switchcraft ...	431.5 $	1000	CONN PATCHKIT 48JACKS 1.7...
MT48K3HNX	Switchcraft ...	447.46 $	1000	CONN PATCHKIT 48JACKS 3.5...
MT48K1FNX	Switchcraft ...	449.79 $	1000	CONN PATCHKIT 48JACKS 1.7...
MT48K3FNX	Switchcraft ...	466.47 $	1000	3 1/2 UNWIRED P-KIT
MT48NSX	Switchcraft ...	486.84 $	1000	CONN PATCHBAY 48JACKS 1.7...
MT48NN	Switchcraft ...	127.1 $	1000	CONN PATCHBAY 48JACKS 1.7...
MT48K3NN	Switchcraft ...	130.98 $	1000	CONN PATCHKIT 48JACKS 3.5...
MT48HN	Switchcraft ...	132.92 $	1000	CONN PATCHBAY 48JACKS 1.7...
MT48K3HN	Switchcraft ...	136.8 $	1000	CONN PATCHKIT 48JACKS 3.5...
MT48FN	Switchcraft ...	138.74 $	1000	CONN PATCHBAY 48JACKS 1.7...
MT48LC16M16A2TG-6A:GTR	Alliance Mem...	1.06 $	1000	IC DRAM 256M PARALLEL 54T...
MT48LC4M32B2P-6A IT:L TR	Micron Techn...	0.0 $	1000	IC DRAM 128M PARALLEL 86T...
MT48LC64M8A2P-75IT:C TR	Alliance Mem...	8.29 $	1000	IC DRAM 512M PARALLEL 54T...
MT48LC64M8A2P-75:IT:CTR	Alliance Mem...	8.19 $	1000	IC DRAM 512M PARALLEL 54T...
MT48LC8M16A2TG-6A:L	Alliance Mem...	--	596	IC DRAM 128M PARALLEL 54T...
MT48LC16M16A2F4-6A IT:GTR	Alliance Mem...	1.86 $	1000	IC DRAM 256M PARALLEL 54V...
MT48LC8M16A2TG-6A:LTR	Alliance Mem...	0.89 $	2000	IC DRAM 128M PARALLEL 54T...
MT48LC16M16A2F4-6A:GTR	Alliance Mem...	1.44 $	2000	IC DRAM 256M PARALLEL 54V...
MT48LC16M16A2B4-7E IT:G	Micron Techn...	--	925	IC DRAM 256M PARALLEL 54V...
MT48LC64M8A2TG-75:C	Alliance Mem...	9.74 $	756	IC DRAM 512M PARALLEL 54T...
MT48LC64M8A2P-75IT:C	Alliance Mem...	--	370	IC DRAM 512M PARALLEL 54T...
MT48LC64M8A2P-75:C TR	Alliance Mem...	6.73 $	1000	IC DRAM 512M PARALLEL 54T...
MT48LC16M16A2TG-6A IT:GTR	Alliance Mem...	1.59 $	10000	IC DRAM 256M PARALLEL 54T...
MT48LC4M32B2TG-6A:L	Alliance Mem...	1.68 $	3733	IC DRAM 128M PARALLEL 86T...
MT48LC4M32B2TG-6A IT:L	Alliance Mem...	1.84 $	3640	IC DRAM 128M PARALLEL 86T...
MT48LC16M16A2P-6A:G TR	Micron Techn...	3.25 $	42000	IC DRAM 256M PARALLEL 54T...
MT48LC64M8A2P-75:C	Alliance Mem...	--	1957	IC DRAM 512M PARALLEL 54T...
MT48LC64M8A2TG-75:IT:C	Alliance Mem...	11.94 $	837	IC DRAM 512M PARALLEL 54T...
MT48LC4M32B2P-7:G TR	Micron Techn...	0.0 $	1000	IC DRAM 128M PARALLEL 86T...
MT48LC8M16A2P-75:G TR	Micron Techn...	0.0 $	1000	IC DRAM 128M PARALLEL 54T...
MT48LC16M8A2P-75:G TR	Micron Techn...	0.0 $	1000	IC DRAM 128M PARALLEL 54T...
MT48LC8M8A2P-75:G TR	Micron Techn...	0.0 $	1000	IC DRAM 64M PARALLEL 54TS...
MT48LC16M16A2BG-7E:D TR	Micron Techn...	0.0 $	1000	IC DRAM 256M PARALLEL 54V...
MT48LC4M32B2B5-7:G TR	Micron Techn...	0.0 $	1000	IC DRAM 128M PARALLEL 90V...