Allicdata Part #: | MT48LC4M16A2P-7EIT:G-ND |
Manufacturer Part#: |
MT48LC4M16A2P-7E IT:G |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 64M PARALLEL 54TSOP |
More Detail: | SDRAM Memory IC 64Mb (4M x 16) Parallel 133MHz 5.4... |
DataSheet: | MT48LC4M16A2P-7E IT:G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Memory Size: | 64Mb (4M x 16) |
Clock Frequency: | 133MHz |
Write Cycle Time - Word, Page: | 14ns |
Access Time: | 5.4ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 54-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 54-TSOP II |
Base Part Number: | MT48LC4M16A2 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory technology plays a crucial role in the rapidly developing fields of modern electronics, communications, and computers. Memory is used to store, process, and retrieve data quickly and efficiently. The MT48LC4M16A2P-7E IT:G is one of the most advanced memory devices available in the market today. It is designed to provide reliable and robust performance in a wide range of applications.
The MT48LC4M16A2P-7E IT:G is a 4 Megabit (Mb) static random access memory (SRAM) with an access time of 7ns. It is based on advanced high-speed CMOS (complementary metal-oxide semiconductor) technology. This device is packaged in a 48-pin model with a temperature range of 0-70 ℃. Due to its low power consumption and long battery life, this memory device is ideal for cost-sensitive, low-power applications such as digital cameras, cellular phones, and mobile computers.
The MT48LC4M16A2P-7E IT:G provides reliable, high-speed data storage and retrieval in a wide range of applications. This device offers a wide range of features including fast read/write cycle times, an on-chip write-protect/erase circuitry, and an extended temperature range. It also features an active power-down mode that eliminates the need to power down the device during periods of inactivity. This feature reduces the overall power consumption and greatly increases the battery life of the device.
The working principle of the MT48LC4M16A2P-7E IT:G is based on static random access memory (SRAM). In this type of memory, each data bit is stored in a static cell that does not need to be regularly refreshed. Data can be read or written to the memory without the need to generate refresh cycles. This makes SRAM faster and more efficient compared to other types of memory. The MT48LC4M16A2P-7E IT:G is capable of writing and reading data with speeds up to 7ns.
The MT48LC4M16A2P-7E IT:G memory device has a wide range of applications. It is a suitable choice for portable consumer electronics such as digital cameras and mobile phones, as well as for embedded applications and computer peripherals. This memory device is also widely used in medical systems, aerospace and military applications, and other mission-critical systems. Additionally, it is the preferred choice for embedded applications that require memory protection from static or power surges.
The MT48LC4M16A2P-7E IT:G is an advanced and reliable memory device for a wide range of applications. Its low power consumption and fast read/write times make it an ideal choice for portable consumer electronics and embedded applications. Additionally, its power-down feature and on-chip write-protect/erase circuitry provide increased reliability and protection from static and power surges. This makes the MT48LC4M16A2P-7E IT:G a great choice for mission-critical applications.
The specific data is subject to PDF, and the above content is for reference
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