MT48LC4M16A2TG-6:G Allicdata Electronics
Allicdata Part #:

MT48LC4M16A2TG-6:G-ND

Manufacturer Part#:

MT48LC4M16A2TG-6:G

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 64M PARALLEL 54TSOP
More Detail: SDRAM Memory IC 64Mb (4M x 16) Parallel 167MHz 5.5...
DataSheet: MT48LC4M16A2TG-6:G datasheetMT48LC4M16A2TG-6:G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (4M x 16)
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5.5ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II
Base Part Number: MT48LC4M16A2
Description

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Memory devices are an integral part of electronic systems and their various components. They provide storage, program, and control data while allowing data access to occur quickly and in a flexible manner. MT48LC4M16A2TG-6:G is a high-speed memory device that serves multiple uses for modern consumer electronics. This article will cover its application field and working principle.

The MT48LC4M16A2TG-6:G is a 4M x 16 bit low power sync dual-mode (SDR+SDRAM) DRAM. It is suitable for industrial and consumer applications such as mobile phone systems, set-top boxes, digital cameras, and portable multimedia players. This memory device features fast access time, low power consumption, and a wide range of functions. It also offers data protection and data backup, making it a great choice for industrial applications.

The device has an operating frequency of up to 166MHz and is organized as 16,777,216 words by 16 bits. It is packaged in a 48-pin TSOP-II package and includes pin compatible SDRAM, which enables the addition of more functions while keeping the same pinout. The device also supports error correcting code (ECC) and cyclic redundancy code (CRC) algorithms, making data integrity more reliable and secure.

The device utilizes a synchronous DRAM (SDRAM) architecture, which is designed for high-speed access. The timing of the access is coordinated by an external SDRAM controller, which provides the proper timing and sequencing of the commands that are issued to the memory device. This ensures that the data read from or written to the device is coherent. In addition, the device is capable of performing a wide variety of operations, such as burst read, burst write, and refresh, as well as single read and write operations.

The device also supports a number of error detection and correction mechanisms, including single- and multi-bit error detection and correction, as well as parity checking. These mechanisms ensure that data stored in the device is error-free, which is particularly important in mission-critical applications. The device also has a write protection option, which prevents accidental overwriting of data.

The MT48LC4M16A2TG-6:G is an efficient, reliable, and secure memory device that can be used for a wide range of applications. Its fast access time and low power consumption, coupled with its high data integrity, make it a great choice for today’s modern consumer electronics and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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