CY7C1363C-133AJXCT

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The CY7C1363C-133AJXCT is a high-performance 128Kbit Dynamic Random Access Memory (DRAM) ideal for applications such as embedded memory and game consoles. It features an ultra-low power, low-voltage design, and an asynchronous interface that eliminates the need for synchronization. CY7C1363C-133AJXCT is designed to provide high-performance and cost-efficient DRAM solutions to embedded systems.

CY7C1363C-133AJXCT can be operated with a supply voltage of 2.5 V to 3.6 V and an asynchronous input clock at rates as high as 100 MHz. The device includes both double data rate (DDR) and single data rate (SDR) units. The device also provides a programmable byte-wide data bus and multiple banks for easy parallelism.

CY7C1363C-133AJXCT adopts the memory array and the high compact circuit device. The design of the device makes it suitable for embedded system designers, who often require high-performance and cost-efficient solutions. It includes both a DDR and an SDR unit, and uses a pad cell to support both two- and four-byte data transfers. Furthermore, the device features a self-refresh mode that allows the DRAM to maintain its data stored in the memory array while in power-down mode.

CY7C1363C-133AJXCT uses an asynchronous interface to store and retrieve data from memory. This means that no external clock signals are required, making it easier and more cost-effective to use. The device supports a 128K-bit (16K-row x 8-bit) memory array with a 512K-bit access time of 85 ns. It features two independent banks, each of which can be used to access different memory addresses simultaneously.

CY7C1363C-133AJXCT also offers several features to reduce power consumption. The device incorporates a programmable power management control, which adjusts the device’s power consumption based on the system’s operating parameters. This feature helps reduce power consumption and extend battery life in mobile devices. Additionally, the device features a self-refresh mode and a programmable active-to-precharge power transition to reduce power consumption during active operation.

The CY7C1363C-133AJXCT Memory is an ideal solution for embedded system designers. It offers an ultra-low power and low-voltage design that provides high-performance and cost-efficient DRAM solutions. The device incorporates an asynchronous interface that eliminates the need for synchronization and supports 128K-bit (16K-row x 8-bit) memory array with a 512K-bit access time of 85 ns. It also includes several power saving features, such as a programmable power management control, self-refresh mode and programmable active-to-precharge power transition. The device can operate with a supply voltage range of 2.5V to 3.6V and an asynchronous input clock rate up to 100MHz.

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