IS42S16100C1-7T-TR Allicdata Electronics
Allicdata Part #:

IS42S16100C1-7T-TR-ND

Manufacturer Part#:

IS42S16100C1-7T-TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 16M PARALLEL 50TSOP II
More Detail: SDRAM Memory IC 16Mb (1M x 16) Parallel 143MHz 5.5...
DataSheet: IS42S16100C1-7T-TR datasheetIS42S16100C1-7T-TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 16Mb (1M x 16)
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: --
Access Time: 5.5ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 50-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 50-TSOP II
Description

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IS42S16100C1-7T-TR, known as supersynch SRAM, is a memory solution for low-power static random access memory (SRAM) applications. It is designed to offer a low-cost and reliable solution for medium-to-high density memory requirements. It is capable of providing fast read/write access times and has been designed to operate at very low power levels.

The IS42S16100C1-7T-TR is ideal for applications requiring moderate memory density and a lower cost than DRAM. It is capable of handling medium-to-heavy traffic and a wide range of read/write operations in a variety of environments. It is particularly suitable for applications such as mobile phones, MP3 players, industrial controls, and medical devices, as it offers a cost-efficient solution that meets the ever-changing needs of today\'s embedded systems.

The IS42S16100C1-7T-TR is a 4Mb SRAM memory that provides 18-bit address and 16-bit data paths. It is organized into 8K x 8K of SRAM arrays and has a maximum operating frequency of 66MHz. It also features active low outputs, self-timed write cycles with additional protection from write/read contention, automatic refresh and data retention, low standby current, and wide accessibility for multi-chip configurations. The IS42S16100C1-7T-TR is capable of offering a fast access time of 15ns.

The IS42S16100C1-7T-TR has multiple applications due to its wide range of features. It can be utilized for real-time data processing and buffering, low power applications such as memory caches, or will even provide 16Mb of scratchpad memory. It is also ideal for providing programmable objects, spooling to disk, or tracing and debugging, as it can enable fast reads and fast writes. It is also capable of being used in place of EPROM or flash memory, as it can store and retrieve data quickly, while consuming less power.

In order to understand the working principle of IS42S16100C1-7T-TR, it is important to understand the basics of addressing, data flow, and memory organization. The memory is divided into 8K x 8K arrays, and each address contains 18 bits, which are composed of 8K bits and 16 bits of data. The 8K bits contain the row and column address, while the 16 bits contain the data. When the control signals are activated, the appropriate address is sent out and the data is read from the addressed location. The read/write operations can be further controlled with the help of additional control signals.

The IS42S16100C1-7T-TR has the ability to read and write data quickly and reliably, and is capable of providing high-speed operation, low power consumption, and wide accessibility due to its organization into 8K x 8K of SRAM arrays. The device is ideal for memory caching, creating programmable objects, and providing 16Mb of scratchpad memory. It has a fast access time of 15ns, and has been designed to consume low power.

The specific data is subject to PDF, and the above content is for reference

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