IS61LV5128AL-10BI-TR

The IS61LV5128AL-10BI-TR is a memory device in the form of an integrated circuit chip. It is a type of static random access memory (SRAM). SRAMs are a type of non-volatile random access memory, which means that the stored data remains in the memory even when the power is removed from the system.

An SRAM is made up of four basic components: an array of memory cells, an address decoder, control logic and I/O driver. The IS61LV5128AL-10BI-TR is a 128Kbit SRAM that provides an asynchronous low power control mechanism. It is designed to be used in applications where lower power is needed such as battery-powered electronics or portable systems.

The working principle of an SRAM is based on the concept of transistors used as a flip-flop memory storage element. A single cell is made up of six transistors and a pair of signal lines (data and address). Each cell holds one bit of data. When a cell is addressed, the data line is driven either high (“1”) or low (“0”) by the two transistors. This data is then latched into the cell’s flip-flop until the next access cycle.

The IS61LV5128AL-10BI-TR has many useful features such as a low power standby mode and Data Retention Mode, which allows for the data to be retained when the power is removed from the system. It also has a self-timed write cycle, which eliminates the need for external write cycle control. This chip is ideal for applications that require a high performance, low power SRAM.

In summary, the IS61LV5128AL-10BI-TR is a type of static random access memory (SRAM) with many useful features, including a low power standby mode, Data Retention Mode and self-timed write cycle, which makes it suitable for memory applications needing a high performance and low power memory. The working principle is based on the concept of transistors used as flip-flop memory storage element.