IS42S16400F-6TL-TR

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The IS42S16400F-6TL-TR is a type of semiconductor memory device, specifically a fast-page mode dynamic random access memory (FPM DRAM). It is suitable for use in computers and other digital devices where persistent memory is needed.

Each module is packaged in a DIP-16 package. This type of DRAM is much faster than traditional DRAMs such as SRAMS or EDO DRAMs and uses less power compared to other DRAMs such as SDRAMs. It is used mainly in embedded systems and other applications in which a low-power, low-cost memory device is needed.

The IS42S16400F-6TL-TR features a 4M x 8-bit configuration, providing fast access time of 10ns. It also has auto-power and refresh options. This fast page mode feature results in higher speed than the traditional page mode memory by reducing the number of cycles required to access data.

The IS42S16400F-6TL-TR’s working principle can be explained in three steps. First, the DRAM stores data in an array of small cells. Each cell is made up of two capacitors and a single transistor. When the chip is powered on, the contents of the cells are charged and the charge on the transistor is monitored.

Second, when a user wants to access data, the address is input and the row address is latched. This causes the row line to go low so that the current passes through the selected row of transistors. The charge on the selected transistors is then transferred to the sense amplifier.

In the last step, the sense amplifier converts the charge into a digital signal. This signal represents the contents of the cell and can be read by the system. After reading the data, the previous charge is restored, ensuring that the data is not lost.

The IS42S16400F-6TL-TR DRAM is a reliable, low-power, low-cost memory device suitable for use in embedded systems and other applications. It has a fast access time of 10ns and offers the additional advantage of auto-power and refresh options. This makes it the perfect choice for devices or systems that require persistent memory at a low cost.

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