IS42S16800E-7BL

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IS42S16800E-7BL is a piece of memory, a type of SDRAM integrated circuit. It has been largely adopted in digital circuits, such as graphics cards, consumer electronics, and other digital systems.

The IS42S16800E-7BL has been specifically designed to ensure the highest performance in digital systems by providing a wide range of features. This memory is capable of double data rate (DDR) with output data rates up to 2.1 gigabytes per second (GB/s) in a single device. This feature makes it particularly attractive for use in graphics cards and other high-speed applications.

The architecture of the IS42S16800E-7BL memory consists of multiple bit slices, which are connected to the host system’s read and write controls. Each bit slice consists of eight individual cells that can store data. These cells are individually accessed by a “row-column” address that consists of a row address and an internal column address.

The read and write operations in the IS42S16800E-7BL memory are further separated into two distinct phases. In the first phase (read phase), the appropriate row address is applied to the memory to identify the desired row. This initiates the read cycle and the data from the corresponding cells are transferred from the memory to the host system.

In the second phase (write phase), the appropriate column address is applied to the memory to identify the desired cell. This initiates the write cycle and the desired data is written to the specified cell. This process is repeated for each individual cell that needs to be accessed for the particular read or write operation.

The IS42S16800E-7BL memory has been widely adopted in many applications. It is suitable for use in embedded systems, gaming consoles, virtual reality headsets, industrial applications, video surveillance systems, video processing systems and a variety of other applications. It is particularly popular in embedded systems due to its high data rate and low power consumption.

In conclusion, the IS42S16800E-7BL memory is a highly reliable, low-latency and high-performance memory, suitable for many applications. Its extended temperature range, high data rates and low power requirements make it a popular choice for many digital systems.

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