Allicdata Part #: | 70V06L20J-ND |
Manufacturer Part#: |
70V06L20J |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 128K PARALLEL 68PLCC |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 128Kb (16... |
DataSheet: | 70V06L20J Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 128Kb (16K x 8) |
Write Cycle Time - Word, Page: | 20ns |
Access Time: | 20ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 68-LCC (J-Lead) |
Supplier Device Package: | 68-PLCC (24.21x24.21) |
Base Part Number: | IDT70V06 |
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Memory is an important enabler of computing that is fundamental to modern data centers and various industrial systems. The 70V06L20J is one of the latest offerings in the field of memory technology. It is an ultra-small omnidirectional high-performance static random access memory (SRAM) device that offers high-speed access and low-power consumption.
Designed for applications requiring high-speed and low-power consumption, the 70V06L20J features an extremely small package size and low power dissipation. The device is ideal for applications such as embedded systems, communications systems, and portable devices where size and power are important factors. It is also suited for automotive and avionics applications.
The 70V06L20J operates with a 1.95 V to 3.6 V voltage range and has a supply current of 1.0 mA typical. The device has a fast access time of 8.0 ns and the operating temperature range of -40°C to +85°C. The device comes in an 8-lead DFN package with a footprint of only 0.7 mm2.
The 70V06L20J utilizes multiplexed-addressing architecture and is organized as eight words by eight bits. The device provides a high-performance interface with fast access times, a high level of integration, and superior power efficiency. The device also has a low power-down mode current of less than 1 µA typical.
The 70V06L20J provides control and data register access, single-byte write and read capability, and self-timed write operations. The device has the capability to write data exclusively to registers and is protected against inadvertent overwrites and corrupted data. It also provides password protection with secure write and read capability.
The 70V06L20J SRAM offers various features for improving system performance, such as programmable burst length, automatic address increment, pipelined burst address loading, and programmable page size. It also includes several features such as write masking and write protection. The device\'s unique features and low power consumption make it ideal for various industrial applications.
Overall, the 70V06L20J is a reliable and efficient SRAM device that provides fast access times, a high level of integration, and superior power efficiency. Its small package size and low power dissipation make it ideally suited for embedded systems, communications systems, and portable devices that require high-speed, low-power data storage. The device\'s additional features and low power consumption also make it an ideal choice for automotive and avionics applications.
The specific data is subject to PDF, and the above content is for reference
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