Allicdata Part #: | 70V06L20JI8-ND |
Manufacturer Part#: |
70V06L20JI8 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 128K PARALLEL 68PLCC |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 128Kb (16... |
DataSheet: | 70V06L20JI8 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 128Kb (16K x 8) |
Write Cycle Time - Word, Page: | 20ns |
Access Time: | 20ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 68-LCC (J-Lead) |
Supplier Device Package: | 68-PLCC (24.21x24.21) |
Base Part Number: | IDT70V06 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is a building block of computing systems and the semiconductor industry. It plays a critical role in the majority of the most important applications and projects, from basic computing applications such as data storage, to machine learning, artificial intelligence, and cloud computing. 70V06L20JI8 is an integrated voltage-controlled ultra-low power serial read/write ferroelectric memory device. It is designed for a variety of applications including industrial, consumer, automotive, and medical.
70V06L20JI8 enables the implementation of ultra-small, low-power memories that can maintain data in a non-volatile, low-power state. This allows for long-term data storage and backup from unexpected power down, or when regularly used batteries are replaced. As it is a ferroelectric memory, 70V06L20JI8 communicates with the external micro-controller via a simple serial interface.
70V06L20JI8 can be described as a non-volatile ferroelectric random access memory (FRAM), as it is both a read/write device that uses an integrated voltage controller to achieve ultra-low power operation and a high data retention rate (up to 1x 109 bits of data). 70V06L20JI8 ferroelectric memory also stands out due to its excellent scalability and reliability. It is easily scalable and can be implemented in an array to reach capacities of up to 256K Words. 70V06L20JI8 has a high linearity and low noise, which ensures a reliable and consistent operation over many years.
The application fields for 70V06L20JI8, due to its low power requirements, high data retention and reliabilty, are vast. With its long-term data storage capabilities and maximum read/write speed of 1000 words per second, 70V06L20JI8 can be used effectively in a wide range of industrial, consumer, and medical applications.
One of the main application fields for the 70V06L20JI8 is within the industrial sector. 70V06L20JI8 can be used in industrial control applications to store data that needs to be retained even after a system restart or a power off event. This can include data logs, component parameters, or control settings. It can also be used in industrial automation, where its non-volatile memory allows reliable and consistent operation over time.
Another application field in which the 70V06L20JI8 can prove useful is consumer electronics. Its low power requirements and read/write speeds enable fast data transmission with minimal power consumption, making it ideal for mobile devices, wearable devices, and embedded systems. Its high data retention qualities can also be used for data storage in consumer electronics musical players or digital cameras.
Due to its reliability, the 70V06L20JI8 also has plenty of applications in the medical sector, such as in medical instruments and diagnostic imaging. Its linearity and low noise can help ensure accurate results, and its scalability and capacity can be used for data storage in medical tests such as ECG readings, X-ray images, or MRI scans.
The working principle of the 70V06L20JI8 is based on a heavily doped polysilicon transistor process technology which provides a high degree of reliability and stability. The device features an integrated voltage controller that allows for ultra-low power operation, and is capable of writing and reading data at speeds of up to 1000 words per second. The device features a 256-word by 64-bit configuration, which allows for simultaneous read and write of up to 256 words. The unique ferroelectric layer stores data in the direction of electric dipole forces, enabling non-volatile storage of data with a high data retention rate of up to 1x 109 bits.
In conclusion, 70V06L20JI8 is an integrated voltage-controlled memory device designed for a variety of applications ranging from industrial, consumer, automotive, and medical purposes. It is highly reliable and has excellent scalability and data retention for long-term data storage. The working principle of the device features a heavily doped polysilicon transistor process technology and an integrated voltage controller which allow up to 1000 word per second read and write speeds with ultra-low power consumption. This makes the 70V06L20JI8 an ideal solution for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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