Allicdata Part #: | 70V06L55J-ND |
Manufacturer Part#: |
70V06L55J |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 128K PARALLEL 68PLCC |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 128Kb (16... |
DataSheet: | 70V06L55J Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 128Kb (16K x 8) |
Write Cycle Time - Word, Page: | 55ns |
Access Time: | 55ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 68-LCC (J-Lead) |
Supplier Device Package: | 68-PLCC (24.21x24.21) |
Base Part Number: | IDT70V06 |
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Memory
The 70V06L55J is a long-term volatile memory device, with a focus on application to embedded system coordination and control. It is a wise selection if the user aims to gain stable performances, low power consumption and reliable stability in the application of highly integrated and constrained systems-on-chip solutions.
Application Field
The 70V06L55J can provide an ample storage capacity, reaching up to 2.5 Mbytes. It uses special latched circuits and high integration of peripheral circuits and has high performance, high reliability and low power consumption. None of the functions available in the device require periodic refresh. It makes it suitable for applications where non-volatile memory is the primary choice, but not feasible due to size or budget limitations. For example, industrial applications such as ASIC data storage, CNC, PLC, microcontroller, inverter, UPS and more.
Working Principle
The heart of the 70V06L55J is its array of non-volatile SRAMs. It uses N-channel MOSFET\'s to hold non-volatile memory values. When a write operation is initiated, the SRAM cells transition from their current state to logic 0, logic 1 or unipolar (floating). Then those values are latched and remain in the system even after power-off.
The flash memory cell employed by the 70V06L55J is of five-transistor NAND architecture. By using the appropriate control signals, the memory is divided into blocks, rather than individual bytes or words. This ensures better reliability and fewer write errors. The 70V06L55J also includes a built-in OTP EPROM, which offers improved system security.
The 70V06L55J was designed to provide a cost-effective solution for various embedded system coordination and control tasks. It features a 3.3v power supply, an in-system programmable architecture and an extended temperature range. Its low power consumption, reliable performance and high capabilities also make it a great solution for multiple applications.
To sum up, the 70V06L55J is an excellent solution for a host of industrial, commercial, and consumer applications. It provides remarkable stability and flexibility, allowing for an in-depth customization of system components. The manufacturer provides ample support, in order to facilitate the development of system that is tailored to user\'s individual needs.
The specific data is subject to PDF, and the above content is for reference
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