Allicdata Part #: | 70V06S20PF8-ND |
Manufacturer Part#: |
70V06S20PF8 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 128K PARALLEL 64TQFP |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 128Kb (16... |
DataSheet: | 70V06S20PF8 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 128Kb (16K x 8) |
Write Cycle Time - Word, Page: | 20ns |
Access Time: | 20ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LQFP |
Supplier Device Package: | 64-TQFP (14x14) |
Base Part Number: | IDT70V06 |
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Memory is an essential component in the electronic world. The 70V06S20PF8 memory is an important component in the memory family. This piece of memory allows a system to store and access information quickly. It is made of a semiconductor material, typically silicon, and its structure allows for better storage and performance compared to other memory devices.
The application field of the 70V06S20PF8 memory is far reaching and it has been used in various applications. As a Dynamic Random Access Memory (DRAM), it is used for main memory in many computers. Due to its microscopic size, it is also used for cache memory in high-end server systems, for digital signal processing, and for embedded systems.
The working principle behind the 70V06S20PF8 memory is quite simple. It consists of a silicon memory cell, which consists of a digitized switch and capacitor, wherein the capacitor can store either a 0 or 1. In order to store a new data bit, a voltage pulse is applied to the switch, which switches the capacitor between 0 and 1 and stores the data bit. To read the data bit, the memory cell is interrogated to determine the voltage present on the capacitor which determines the 0 or 1.
This type of memory is very efficient and speedy as it uses a single transistor and a capacitor to store a single bit of data. Furthermore, the memory cell is non-volatile and restores its data even after long periods of power outages, making it ideal for many applications. In addition to this, the 70V06S20PF8 memory is able to run at very high speeds and offers low power consumption. All these properties combine to make it a valuable choice for many applications.
In conclusion, the 70V06S20PF8 memory has been designed to be extremely versatile, efficient, and speedy. It is used for many applications, from cache memory in server systems, to digital signal processing, and embedded systems. It uses a simple yet effective working principle with a silicon memory cell that allows it to store and access data quickly. Thanks to its non-volatile nature, it is able to persistently store data despite power outages. Finally, its low power consumption and high speed make it a valuable component in many systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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70V05S25PFI | IDT, Integra... | 0.0 $ | 1000 | IC SRAM 64K PARALLEL 64TQ... |
70V06L45PF | IDT, Integra... | 0.0 $ | 1000 | IC SRAM 128K PARALLEL 64T... |
70V06S25PFI | IDT, Integra... | 0.0 $ | 1000 | IC SRAM 128K PARALLEL 64T... |
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