7143LA20PF8

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Asynchronous
Memory Size:	32Kb (2K x 16)
Write Cycle Time - Word, Page:	20ns
Access Time:	20ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	100-LQFP
Supplier Device Package:	100-TQFP (14x14)
Base Part Number:	IDT7143

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Memory: 7143LA20PF8 Application Field and Working Principle

Memory is an essential component of a majority of electronic systems. Memory is generally categorized based on how it is used or on its storage capacity. 7143LA20PF8 is a kind of static random access memory (SRAM) which is widely used in computer system memory and numerous other applications.. This article discusses the application field and working principle of 7143LA20PF8.7143LA20PF8 consists of an array of volatile memory cells usually arranged in a rectangular array with circuits to control the address lines and transfer data in and out of the array. It is typically used for always-read, always-write applications that require rapid access to data. Compared to dynamic RAM (DRAM) , SRAM requires less power, thus can be used in laptop computers and other battery powered applications. 7143LA20PF8 is also a common choice for embedded systems as it is capable of maintaining data without a power source.The use of 7143LA20PF8 covers a wide variety of applications. It is widely used in computing system memory, processor cache memory, and portable devices. In embedded control systems, 7143LA20PF8 is often used in register, program memory and memory sections. It is also used in data storage applications such as in hard disk drives and portable storage units. Additionally, 7143LA20PF8 finds applications in a variety of other industries such as automotive, instrumentation and remote control, satellite communication, robotic control and airport radar systems.In this article we have also discussed the working principle of 7143LA20PF8. Every bit of information stored in a 7143LA20PF8 memory cell is brought out through a pair of NMOS transistors, one each controlling the vertical and horizontal lines of the memory cell. Once the current is passed the capacitor is discharged, loading the data into the memory cell. The data is then retained until the memory cell is powered down. To write back the data after it is read, the cells require a write cycle to be initiated. This write cycle is repeated until all cells are initialized.In conclusion, 7143LA20PF8 is an important and versatile type of memory that finds applications in a wide range of industries and applications. It is characterized by its high speed and low power consumption, making it an ideal choice for embedded systems and battery-powered applications. The capability of maintaining data without a power source and its easy read-write capability make 7143LA20PF8 a popular choice for various portable and desktop applications.

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