Allicdata Part #: | 7143LA25J8-ND |
Manufacturer Part#: |
7143LA25J8 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 32K PARALLEL 68PLCC |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 32Kb (2K ... |
DataSheet: | 7143LA25J8 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 32Kb (2K x 16) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 68-LCC (J-Lead) |
Supplier Device Package: | 68-PLCC (24.21x24.21) |
Base Part Number: | IDT7143 |
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7143LA25J8 memory is a type of random access memory (RAM) that accesses data stored in a computer by suggesting a matrix of 4 rows and 4 columns, where each intersection of the row and column identifies a storage location. In this way, memory access is faster and more efficient compared to the traditional loading of data from mass storage devices such as hard drives.
Application Field
7143LA25J8 memory has a wide variety of applications. It is commonly used in desktop computers, laptops and servers, as well as for game consoles, TV boxes, interactive kiosks, surveillance systems and more. Due to its reliable performance and power-efficient design, it is also used in high-end mobile phones and other portable applications. Furthermore, 7143LA25J8 memory can be used to store large amounts of data and speed up overall system performance.
Working Principle
7143LA25J8 memory utilizes an array of volatile cells that store data within integrated circuitry, rather than requiring multiple separate memory components. This allows 7143LA25J8 memory to work with higher speed and lower power consumption. Because of this, the memory cells can be accessed and data can be written to or read from them at a much faster rate than traditional memory devices.
Each column and row of the memory array is associated with a control signal. When a request to read or write data arrives, the corresponding row and column addresses are applied to the control signals, causing the appropriate data cell to be selected. This is done in order to store, read or write data. The time required for this process, known as the “memory access time”, is usually specified in nanoseconds.
In order to increase the speed of the memory access, 7143LA25J8 memory takes advantage of a dual-port access structure that allows simultaneous access from different directions. Data can then be written to or read from the memory via either port while allowing the CPU to perform other operations. Also, 7143LA25J8 memory incorperates various error-correction techniques that help to ensure the integrity of the data stored within.
Conclusion
7143LA25J8 memory can be used to increase the speed of a system, improve energy efficiency and provide large capacity storage. It is a very popular and reliable type of memory that can be found in a wide variety of applications. Its dual-port access structure and error-correction techniques help to ensure the accuracy, integrity and speed of data stored within.
The specific data is subject to PDF, and the above content is for reference
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