7143SA20J8

7143SA20J8 Application Field and Working Principle

7143SA20J8 is a type of dynamic random-access memory (DRAM) developed by Toshiba. It is specifically designed for high-reliability, high-performance applications and is used for a wide range of memory solutions. It is ideal for mission-critical applications such as automotive, computing and industrial control.

This DRAM is a 6-transistor SRAM cell, where each SRAM cell can store one bit of data. The 6-transistor SRAM cell is composed of four transistors connected in a cross-coupled fashion, one row of transistors, and one column of transistors. The transistor array is designed to allow the read and write operations on the data stored in the individual cells.

The read and write operations on the DRAM take place through accessing the DRAM\'s word line by setting the data line voltage. When a high voltage is applied to the data line, the charges stored at the intersection of the word line and the column address bit line (ABL) are transferred to the data line. The data read from the DRAM is proportional to the voltage applied to the data line.

The write operation on the DRAM is accomplished by setting the data line voltage to a value greater than the threshold voltage of the word line\'s transistors so that it can store charge. When the write operation is complete, the data line is set back to its original state, allowing the charges to be stored at the intersection of the column address bit line and the word line.

The 7143SA20J8 is a highly reliable DRAM as it is composed of multiple layers of protection circuitry layers that can guard against data loss. These layers include redundant columns, rows, and ECC (Error Correction Code) protection. In addition, the 7143SA20J8 has a refresh rate that is higher than most other DRAMs, allowing it to maintain its data integrity even when power supply is disrupted.

In conclusion, the 7143SA20J8 DRAM is an ideal choice for high-reliability, high-performance applications. It is composed of a 6-transistor SRAM cell which allows for fast data read and write operations. It also features multiple layers of protection to guard against data loss, as well as a high refresh rate for maintaining data integrity during power disruptions.