Allicdata Part #: | CY7C11651KV18-400BZC-ND |
Manufacturer Part#: |
CY7C11651KV18-400BZC |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 18M PARALLEL 165FBGA |
More Detail: | SRAM - Synchronous, QDR II+ Memory IC 18Mb (512K x... |
DataSheet: | CY7C11651KV18-400BZC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous, QDR II+ |
Memory Size: | 18Mb (512K x 36) |
Clock Frequency: | 400MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 165-LBGA |
Supplier Device Package: | 165-FBGA (13x15) |
Base Part Number: | CY7C11651 |
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Memory is the fundamental element of all computing systems and is used to store data. The CY7C11651KV18-400BZC is a type of memory device used in...
The CY7C11651KV18-400BZC is a non-volatile, low-power serial CMOS synchronous Static Random Access Memory. It is organized into a series of cells, each of which has two transistors, one for storage and one for read/write access. The device is designed to operate between 2.3V and 3.63V, at a temperature range of -40°C to 85°C. It offers a fast random cycle time of 55ns, fast write cycle time of 25ns, and selectable output enable.
The CY7C11651KV18-400BZC has various applications in today\'s industrial world, including embedded systems, data acquisition systems, and microprocessor-based systems. It provides fast, efficient memory access and low power consumption. Its low-power operation and easy programming enable it to be used in applications where power efficiency is a priority. For example, it can be used in industrial robotics, automotive applications, medical applications, smart devices, portable consumer electronics, and embedded devices.
The CY7C11651KV18-400BZC works by utilizing a row address strobe (RAS) and a column address strobe (CAS) to enable access to a particular cell in the memory array. RAS and CAS together form the address at which the data is stored. Once the address is specified, the contents of the memory cell can be read or written. The device also contains a register file array, which is used to store data which is used in synchronization with the memory array.
The CY7C11651KV18-400BZC has a write protect feature, which allows the user to select whether data stored in the memory array can be written to or not. The write protect feature can be manually enabled or disabled, and is useful for permanent storage of data. The CY7C11651KV18-400BZC also has a power-up reset feature, which initializes the register file array upon power-up, preventing erroneous data from being written to it.
The CY7C11651KV18-400BZC is a versatile and reliable memory device, providing efficient access and low power consumption. The combination of fast access to stored data, reliable data storage, and low power consumption makes it well suited for industrial applications and other devices which require efficient memory access. In addition, its write protect feature makes it well suited for permanent data storage.
The specific data is subject to PDF, and the above content is for reference
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