AS4C64M16D3-12BCN Allicdata Electronics
Allicdata Part #:

1450-1111-ND

Manufacturer Part#:

AS4C64M16D3-12BCN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 1G PARALLEL 96FBGA
More Detail: SDRAM - DDR3 Memory IC 1Gb (64M x 16) Parallel 800...
DataSheet: AS4C64M16D3-12BCN datasheetAS4C64M16D3-12BCN Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gb (64M x 16)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (13x9)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AS4C64M16D3-12BCN is a type of Memory that is specifically designed to store large quantities of data while offering the highest possible speeds. It\'s an advanced memory device that is used to deliver exceptional performances from servers and high-end applications. It is a new generation of DRAMs with an innovative architecture that has several advantages over traditional DRAMs.

The most important application field for AS4C64M16D3-12BCN Memory is data centers and servers for public and private cloud servers. This type of memory is capable of providing noteworthy performance improvements, in addition to its extremely high data rates. It enables servers to handle more demanding workloads, such as big data analysis, web hosting, web service and other server-side applications.

The device provides power efficiency in addition to superior speeds. Because it has a very low operating voltage, it draws very little power overall. This in turn reduces the cost of running the server and can make a significant difference in operational costs.

The working principle of AS4C64M16D3-12BCN Memory is quite simple. It is designed to allow the system to store more data in a smaller area. The device\'s architecture is designed to take advantage of the smaller size while delivering improved performance. It is able to use multiple transistor banks in order to store larger amounts of data with improved access speeds.

This type of Memory is also designed with a process technology that is more efficient than traditional DRAMs. This makes it more suitable for computer applications that require faster read and write speeds. Furthermore, it is also capable of providing higher memory bandwidths, which means that multiple data transfers can be done more quickly than with traditional DRAMs.

The technical specifications for AS4C64M16D3-12BCN Memory include an Operating Voltage of 1.35V, Data Rate of 6.4GB/sec, and maximum memory capacity of 16GB. This device also has an on chip error correction code, which ensures that the data stored is correctly and safely retrieved.

AS4C64M16D3-12BCN Memory is an ideal option for those looking to deploy high performance servers and cloud systems. Its combination of guaranteed performance, heightened data rates and lower power consumption, makes it the perfect choice for businesses seeking to maximize efficiency and performance.

The specific data is subject to PDF, and the above content is for reference

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