AS4C64M16D3-12BIN Allicdata Electronics
Allicdata Part #:

1450-1112-ND

Manufacturer Part#:

AS4C64M16D3-12BIN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 1G PARALLEL 96FBGA
More Detail: SDRAM - DDR3 Memory IC 1Gb (64M x 16) Parallel 800...
DataSheet: AS4C64M16D3-12BIN datasheetAS4C64M16D3-12BIN Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gb (64M x 16)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (13x9)
Description

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AS4C64M16D3-12BIN is a high-performance memory device that brings high-speed and low-power features to memory applications. This memory device is built on a 64 Mbit technology that enables it to deliver an unprecedented combination of performance, low power consumption and storage density. The AS4C64M16D3-12BIN is designed for a wide range of consumer electronics, as well as industrial and embedded applications including Graphics, Audio and Video, Automotive and Networking applications.

The AS4C64M16D3-12BIN memory device is the highest density memory device available on the market and has a lower power consumption than many previous generations of memory products. The device integrates a 64Mbit core that delivers high-speed, low-power performance with a data transfer rate of up to 12Gs/s and 256-byte burst transfers. The integrated Error Correction Code (ECC) feature helps provide additional data integrity and reliability to memory applications.The device is available in three densities: a 4Mbit, 16Mbit and 64Mbit. The device also includes support for various controller interfaces such as Serial Peripheral Interface (SPI), DDR2/3, and Dual Data Rate (DDR) 4. The integrated power-saving features help reduce power consumption and increase efficiency.

The AS4C64M16D3-12BIN memory device is the perfect choice for high-performance, low-power memory applications due to its robust design and performance benefits. The device has been designed to operate with minimal power consumption, yet still deliver a high level of performance. Its low-voltage operation provides a higher power efficiency, making it more cost-effective. In addition, the device\'s high speed and low delays also help in improving system response. The integrated ECC feature provides enhanced data reliability in applications requiring a higher level of data integrity.

AS4C64M16D3-12BIN is an ideal memory device for applications that require high-performance and low-power operation. Its versatile design makes it suitable for a wide range of consumer electronics, as well as industrial and embedded applications. With its low-power, high-speed performance and advanced features, such as ECC support, the AS4C64M16D3-12BIN is the perfect choice for a wide range of memory applications.

The specific data is subject to PDF, and the above content is for reference

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