IS49FL004T-33VCE

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH
Memory Size:	4Mb (512K x 8)
Clock Frequency:	33MHz
Write Cycle Time - Word, Page:	--
Access Time:	120ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	0°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package:	32-VSOP

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Introduction

IS49FL004T-33VCE is a 4-megabyte single chip Flash memory IC. It is a highly reliable, high-density, electrically erasable programmable read-only memory (EEPROM). IS49FL004T-33VCE is produced using standard CMOS technology and it is designed for use in embedded systems and other applications that require non-volatile memory.

Application Fields

IS49FL004T-33VCE is suitable for a wide variety of applications, including:

• Non-volatile memory in microcontrollers
• Data logging applications
• Disc drive applications
• Automobile applications
• Communications applications
• Consumer electronics
• Industrial control

Performance

This single chip Flash memory has the following features:

• High inline data transfer rate
• 2.7V to 3.6V single supply voltage
• Low current consumption
• Data retention (20 years)
• Erase/write cycle endurance (100K cyles)
• Industrial temperature range (-40˚C to +85˚C)

Working Principle

The IS49FL004T-33VCE is a single chip Flash memory IC. It is organized into sectors of varying sizes and is designed for use in embedded systems and other applications that require non-volatile memory. It uses a standard CMOS technology to achieve high throughput, low current consumption, and industrial temperature range.The memory can be programmed by issuing the appropriate instruction and data to a sector or page of the memory. The on-chip program timer features automatic time-out to reduce programming time. The device also includes an automatic power up write controller and a write-protect register to protect against accidental writes.Erase operations can be carried out simultaneously on all sectors of the memory or individually. Erase operations can also be carried out automatically after each programming sequence. In addition, the device includes several error correction codes (ECC) in order to prevent data corruption due to read errors.The chip also features a detailed status register, allowing the user to check to see if the memory has been successfully erased or programmed. The device also features a built-in test circuit for testing the correctness of both erase and program operations.

Conclusion

IS49FL004T-33VCE is a 4 Mbit single chip Flash memory IC which provides an extremely wide variety of applications. It provides high speed data transfers while consuming low current, with a solid-state reliability that is ensured by its 20-year data retention and 100,000 erase/write cycle endurance. Its on-chip timer, combined with its error correction and test circuits, provides a reliable, rugged and high-performance Flash device.

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