IS49NLC18160-25BL

IS49NLC18160-25BL is a type of memory, which is used in a wide range of applications, from automotive to industrial and consumer electronics. This memory device is popular for its high performance, low cost, and small size. It has a wide range of applications, including automotive, industrial, computing, robotics, gaming, medical, and communications.

The IS49NLC18160-25BL memory device is a 16K x 8-bit non-volatile Static Random Access Memory (SRAM). It features 162 byte page writes and 256 byte page reads. It is powered by a 3.3V supply voltage, has a cycle time of 45ns, and a standby current of 5 µA. The device has high speed program/erase (1ms typical), write protection, and data retention of 10 years.

The working principle of the IS49NLC18160-25BL memory device is based on a four-transistor SRAM structure. The transistors are interconnected in such a way that each bit is composed of four transistors. When the memory is powered, the two bit lines transfer the binary data to the array of transistors. When the memory is written, the data is converted to binary data and then written onto the SRAM array. During the read operation, the binary data is converted to voltage levels and then read by the bit lines.

The IS49NLC18160-25BL memory device is compatible with the JEDEC single-voltage 3.3V operating voltage and fully backward compatible with earlier versions of the Plug and Play devices. Its industrial-strength design allows it to be used in a wide range of applications including automotive, industrial, computing, robotics, gaming, medical, and communications. Its design also makes it ideal for use in harsh and temperature-sensitive environments, such as automotive and aerospace applications.

The IS49NLC18160-25BL is widely used in miniaturized systems, such as wearables, to provide high-performance memory solutions. It is also used in home automation, smart meters, and medical portable devices.

In summary, the IS49NLC18160-25BL is a versatile non-volatile memory device that is popular for its high performance, low cost, and small size. Its wide range of application fields and its four-transistor SRAM structure make it a desirable memory solution for many applications.