IS49NLC18160-25BLI Allicdata Electronics
Allicdata Part #:

IS49NLC18160-25BLI-ND

Manufacturer Part#:

IS49NLC18160-25BLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 288M PARALLEL 144FCBGA
More Detail: DRAM Memory IC 288Mb (16M x 18) Parallel 400MHz 20...
DataSheet: IS49NLC18160-25BLI datasheetIS49NLC18160-25BLI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 288Mb (16M x 18)
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: --
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-FCBGA (11x18.5)
Description

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Memory

IS49NLC18160-25BLI is a synchronous high-speed static random access memory (SRAM) chip integrated with the logic circuit and storage cell, which is widely used in embedded system memory design and many other areas. This article will talk about its application field and working principle.

Application Field

IS49NLC18160-25BLI SRAM is usually used in embedded system memory design, including data acquisition systems, metering systems, industrial control systems and other field-bus systems. It can also be used in other fields, such as data transmission systems, communications networks, network servers, storage systems, test and measurement, multimedia devices, and so on. In addition, due to its high speed and low power consumption, it has also been favored by many digital audio systems.

Working Principle

The working principle of IS49NLC18160-25BLI is based on capacitor. The circuit of this memory chip can be divided into two parts, the control logic and the memory cell. The control logic part is responsible for controlling the access and updating of the memory cell and can be controlled by external energy sources. The memory cell contains capacitors to store data. Capacitors store data in two different states of charge, which represent 0 and 1. This state is referred to as “storage bit”. When the power is supplied, the circuit powers the control logic part to execute commands and control the access and updating of data. Then, the memory cell can use its stored data to continue the task.

Advantages

Compared with other memory chips, IS49NLC18160-25BLI has the following advantages:

  • High speed: The access time of IS49NLC18160-25BLI can reach 25ns which is much faster than other types of memories.
  • Low power consumption: IS49NLC18160-25BLI has low power consumption, which can reduce the system’s overall power consumption and make the power management process more efficient.
  • Wide temperature range: This type of memory chip can work in a wide temperature range, which increases its application range.
  • Small size: The memory chip has a small size which enables it to take up less space in the system.

Conclusion

IS49NLC18160-25BLI is a high speed synchronous Static Random Access Memory (SRAM), which is widely used in embedded system memory design and many other fields. It is characterized by its fast access time, low power consumption, wide temperature range and compact size. It is an ideal choice for many digital or analog communication systems.

The specific data is subject to PDF, and the above content is for reference

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