IS49NLC18160-33BI Allicdata Electronics
Allicdata Part #:

IS49NLC18160-33BI-ND

Manufacturer Part#:

IS49NLC18160-33BI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 288M PARALLEL 144FCBGA
More Detail: DRAM Memory IC 288Mb (16M x 18) Parallel 300MHz 20...
DataSheet: IS49NLC18160-33BI datasheetIS49NLC18160-33BI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 288Mb (16M x 18)
Clock Frequency: 300MHz
Write Cycle Time - Word, Page: --
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-FCBGA (11x18.5)
Description

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The IS49NLC18160–33BI memory is one of the latest advances in high density non-volatile memory technology. The IS49NLC18160–33BI is based on the latest in flash memory technology, offering greater durability, security, and storage capacity than traditional NAND flash memory chips.

This high-density memory is used primarily in consumer electronics, digital cameras, DVRs, and other applications that require large amounts of storage. Additionally, the IS49NLC18160–33BI memory can be used in vehicles and industrial applications. The small size and low power usage of the IS49NLC18160–33BI make it an ideal choice for these types of applications.

The IS49NLC18160–33BI memory is available in two types: standard versions and high-density versions. Standard versions of the IS49NLC18160–33BI offer up to 128 megabytes of capacity, while the high-density version is capable of storing up to 1 terabyte of data. The IS49NLC18160–33BI provides fast read and write speeds and low power consumption.

The IS49NLC18160–33BI memory utilizes a new non-volatile Flash Memory Cell (NVC) technology that allows the chip to store data without the need for an external power source. This technology also allows for fast read/write speeds, meaning that the data stored on the IS49NLC18160–33BI chip can be accessed quickly when needed.

The IS49NLC18160–33BI memory chip is designed to be highly reliable, with error correction technology preventing data loss in the event of chip failure. The chip’s built-in fast boot feature ensures that the memory is ready to use upon startup. Additionally, the IS49NLC18160–33BI has ECC (Error Correcting Codes) that detect and correct any errors that may occur during data transfer.

The IS49NLC18160–33BI memory chip is also equipped with AES 256-bit encryption, providing a secure storage solution for sensitive data. The chip also supports a host of other security features, including chip-level authentication, secure erase, and write protection.

The IS49NLC18160–33BI memory chip offers a variety of advantages over traditional NAND Flash memory. It is more reliable, more secure, and provides a higher capacity than standard NAND Flash memory. It is also faster, more power-efficient, and designed to be more rugged than other forms of Flash memory.

Overall, the IS49NLC18160–33BI memory is an excellent choice for embedded applications that require large amounts of high-density non-volatile memory. Its fast read/write speeds, error correction technology, and advanced security features make it an ideal solution for embedded applications that require secure data storage.

The specific data is subject to PDF, and the above content is for reference

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