IS42VM16160D-8BLI-TR Allicdata Electronics
Allicdata Part #:

IS42VM16160D-8BLI-TR-ND

Manufacturer Part#:

IS42VM16160D-8BLI-TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 256M PARALLEL 54TFBGA
More Detail: SDRAM - Mobile Memory IC 256Mb (16M x 16) Parallel...
DataSheet: IS42VM16160D-8BLI-TR datasheetIS42VM16160D-8BLI-TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 256Mb (16M x 16)
Clock Frequency: 125MHz
Write Cycle Time - Word, Page: --
Access Time: 6ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x13)
Description

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IS42VM16160D-8BLI-TR is a popular IC produced by Integrated Silicon Solution, Inc. It is a type of dynamic Memory and is often used in a wide range of applications. Dynamic Memory is typically used for data storage and for providing data buffering for fast read/write access. It has a wide range of uses in embedded systems, digital signal processing and systems with multiple CPUs.

The IS42VM16160D-8BLI-TR, or “Integrated Floating-type Data Memory” (IFDM), is a type of 8-bit, 512Kb dynamic random access memory (DRAM). The device is designed to operate in the synchronous DRAM (SDRAM) mode and has a split array architecture that supports the Page Mode access mechanism. This design makes the device better suited for higher capacity requirements.

In order to understand how the device works it is necessary to understand its memory structure. The memory is organized into two sub arrays: an upper array and a lower array. Each array consists of 512Kb of memory, with 2048 columns and 256 rows. The lower array is made up of the lower half of the device and the upper array consists of the upper half. This allows for much faster access when reading and writing data.

Each memory bank consists of data and control pins, which can be configured in different ways. The configuration pins are used to set the frequency and timings of the memory access. The device also has an address input, which is used to select a particular row in the array for the read/write access. Once the address is entered, the required data is read from the specified location and can then be written back to the location by the controller.

In terms of the working principle, the integrated circuit contains logic blocks that control the read and write operations. The logic block determines how much data is transferred and when. It also manages the timing of the read and write operations. The device can be operated in normal, Page Mode, or Window Mode. Normal Mode accesses one row at a time, while Page Mode allows multiple rows to be accessed at once. Window Mode is a more advanced feature and allows larger blocks of data to be read and written to the DRAM.

IS42VM16160D-8BLI-TR is a versatile and reliable type of dynamic memory and is used in a number of applications. It is often used in applications that require large amounts of data to be stored and accessed quickly, such as servers and graphics applications. It is also suitable for data buffering in applications such as routers and switches. The device is also popular for its compact size, which makes it suitable for integration into a wide range of products.

The specific data is subject to PDF, and the above content is for reference

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