AS4C64M16MD1-5BCNTR Allicdata Electronics
Allicdata Part #:

AS4C64M16MD1-5BCNTR-ND

Manufacturer Part#:

AS4C64M16MD1-5BCNTR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 1G PARALLEL 60FBGA
More Detail: SDRAM - Mobile LPDDR Memory IC 1Gb (64M x 16) Para...
DataSheet: AS4C64M16MD1-5BCNTR datasheetAS4C64M16MD1-5BCNTR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Memory Size: 1Gb (64M x 16)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x10)
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Description

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Memory

AS4C64M16MD1-5BCNTR is a 64Mbit (8Mx8/4Mx16) low voltage and low power CMOS static RAM organized as 8M words by 8-bits/4M words by 16-bits. It is fabricated using Sitronix’s CMOS technology, suitable for high speed operation. AS4C64M16MD1-5BCNTR is designed and offered in the pinout configuration identical to the industry standard 200mil TSOP II package. The device operates from a single +2.5V/3V supply with an extended temperature range of –40°C to +85°C.

The AS4C64M16MD1-5BCNTR is designed for low power operation and is ideal for use in applications such as cellular phones, two-way radios, hand-held Computers, personal digital assistants, and other portable or industrial control equipment. The AS4C64M16MD1-5BCNTR is also suitable for automotive applications.

Application Field of AS4C64M16MD1-5BCNTR

The application field of AS4C64M16MD1-5BCNTR is mainly for low power portable electronic devices. It is well suited for use in cellular phones, two way radios, hand-held computers, personal digital assistants, and other portable or industrial control equipment. In addition, it is also suitable for automotive applications due to its extended temperature range and its reliability features.

The AS4C64M16MD1-5BCNTR is designed to provide high speed, low power operation and is available in various packages. The typical speed / power of the AS4C64M16MD1-5BCNTR is as follows: EDO Access Time= 70/60ns, READ/WRITE Current= 55/150mA, READ/WRITE Power = 0.085/0.24W, and stand-by current = 2mA.

Working Principle of AS4C64M16MD1-5BCNTR

The AS4C64M16MD1-5BCNTR is organized as either an 8M words x 8-bits or 4M words x 16-bits Static RAM. It is fabricated using CMOS technology to achieve fast access times and low power consumption over a wide operating temperature range. The device is organized as a matrix of columns and rows, with each row containing up to 8-bits of data.

The AS4C64M16MD1-5BCNTR contains single-bit and double-bit error detection and correction logic to ensure reliability of data stored in the memory. All memory cells are accessed using the address and command signals on the device\'s address and command decoder. The device is designed to accept both single-bit write and multiple-bit write commands. For single-bit writes, the address and data signals representing the location of the bit to be written are specified by the user.

When a multiple-bit write command is used, each additional bit location for writing is decremented by one from the previous location rather then being specified by the user. This allows for multiple consecutive bits to be written without having to specify each individual bit address. The device also supports read and write operations. Read operations are performed by providing the address and command signals to the device and then receiving the data from the output pins.

In addition to supporting single-bit and multiple-bit read and write operations, the AS4C64M16MD1-5BCNTR also supports masked read, auto-increment read, and auto-read operations. The masked read function allows the user to read a specific set of bits in a memory array without the need to provide the address signals. The auto-increment read operates in a similar fashion, only incrementing the address after each read in order to allow continuous reads without the need for address signals. Finally, the auto-read function allows the user to read the same set of data from a single address multiple times.

The AS4C64M16MD1-5BCNTR is extremely reliable due to the use of ECC logic. The logic is designed to detect and correct a single-bit error and detect double-bit errors. This ensures data integrity and reliability when using the device.

Overall, the AS4C64M16MD1-5BCNTR is ideal for use in low power portable electronic devices. It is well suited for use in cellular phones, two way radios, hand-held computers, personal digital assistants, and other portable or industrial control equipment. It provides fast operation and low power consumption over a wide operating temperature range and is very reliable due to the ECC logic.

The specific data is subject to PDF, and the above content is for reference

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