AS4C256M32MD2-18BCNTR

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As an important part of the computer system, memory components play a vital role in ensuring the smooth running of computing systems. AS4C256M32MD2-18BCNTR is an advanced memory device, it specializes in providing high-density storage solutions. It is widely used in different kinds of embedded systems, mainly due to its excellent performance.

Features

AS4C256M32MD2-18BCNTR is a dynamic RAM module that provides a fast, high-density memory solution for embedded systems. It is also known for its low current consumption, which makes it an ideal solution for applications where power consumption is an issue. It is capable of supporting up to 16GB of storage, making it suitable for many types of applications that require high-capacity memory solutions.

The device is also very reliable and has a maximum operating temperature of 125°C. It also has a wide operating range of -40°C to +85°C, making it suitable for operation in extreme temperatures. The device has a refresh cycle of 15.6US, and it supports a maximum operating frequency of 100MHz.

Application Field

AS4C256M32MD2-18BCNTR is used in many embedded systems which require a large amount of data storage. It is widely used in medical, telecommunications, automotive, industrial and consumer applications. It is also used in communication networks, gaming consoles, printers, scanners and other such devices. It is also popular in military applications due to its reliability and rugged construction.

Its low power consumption makes it suitable for applications that require low power consumption and its wide temperature operating range makes it suitable for use in extreme temperature conditions. It is also well-suited for small portable devices as it does not consume a lot of power when in standby mode.

Working Principle

AS4C256M32MD2-18BCNTR is a form of Dynamic Random Access Memory (DRAM). It works on the principle of storing each bit of data as the state of a capacitor. When the charge in the capacitor is low, the bit is represented as a zero, and when the charge is high, it is represented as a one. Data is written to and read from the DRAM cells by accessing these capacitors. This process takes place through a bus architecture and an internal memory array.

AS4C256M32MD2-18B has a synchronous circuit core to control the address and data signals in the data bus. This circuit core performs various tasks such as controlling the flow of the data signals, checking the data signals and ensuring that data is stored in the correct memory address. It also performs the task of refreshing the memory array.

Conclusion

AS4C256M32MD2-18BCNTR is an advanced memory device that provides high-capacity, high-density storage solutions for embedded systems. It is reliable, has a wide operating temperature range and low power consumption. It is suitable for a wide range of applications, from consumer devices to military and medical applications. Its DRAM architecture is ideal for high-speed data transfer and it is able to provide very fast data throughput.

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