Allicdata Part #: | IXXN110N65C4H1-ND |
Manufacturer Part#: |
IXXN110N65C4H1 |
Price: | $ 16.56 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 650V 210A 750W SOT227B |
More Detail: | IGBT Module PT Single 650V 210A 750W Chassis Mount... |
DataSheet: | IXXN110N65C4H1 Datasheet/PDF |
Quantity: | 114 |
1 +: | $ 15.05700 |
10 +: | $ 13.92680 |
25 +: | $ 12.79730 |
100 +: | $ 11.89410 |
250 +: | $ 10.91540 |
Series: | GenX4™, XPT™ |
Part Status: | Active |
IGBT Type: | PT |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 210A |
Power - Max: | 750W |
Vce(on) (Max) @ Vge, Ic: | 2.35V @ 15V, 110A |
Current - Collector Cutoff (Max): | 50µA |
Input Capacitance (Cies) @ Vce: | 3.69nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227B |
Base Part Number: | 110N65 |
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IXXN110N65C4H1 is a type of device belonging to the family of Insulated Gate Bipolar Transistors (IGBTs). This particular type of IGBT module is produced by ON Semiconductor and features very low losses when switching at high power levels, making it a valuable choice for various applications.The IXXN110N65C4H1 is a single-phase IGBT module consisting of two IGBTs (Insulated Gate Bipolar Transistors) and two fast-recovery diodes embedded in a plastic package. It has a very robust design and is suitable for use in high-reliability circuits.The IXXN110N65C4H1 is mainly used in automotive, industrial and consumer applications. These include motor drives, solar inverters, UPS systems, variable-speed motor controls, and power supplies for appliances. It is also used in uninterruptible power supply systems and renewable energy applications, such as wind and solar power.As far as the working principle of the IXXN110N65C4H1 is concerned, it is based on the principle of bipolar transistor amplification. When an electrical current is applied to the gate of the IGBT, it causes a change in the internal junction between the emitter and collector. This change of the junction results in an amplified current flowing through the collector, based on the amount of current that passes through the gate. The result of this is an increase in the current through the collector, which can be used to control different types of loads.Overall, the IXXN110N65C4H1 is an efficient and reliable choice for various industrial and automotive applications, and its robust design makes it a viable choice for long-term usage. It has some excellent features and offers better performance than many of its competitors.
The specific data is subject to PDF, and the above content is for reference
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