APT75GP120JDQ3 Allicdata Electronics
Allicdata Part #:

APT75GP120JDQ3-ND

Manufacturer Part#:

APT75GP120JDQ3

Price: $ 30.93
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT 1200V 128A 543W SOT227
More Detail: IGBT Module PT Single 1200V 128A 543W Chassis Moun...
DataSheet: APT75GP120JDQ3 datasheetAPT75GP120JDQ3 Datasheet/PDF
Quantity: 757
1 +: $ 28.11690
10 +: $ 26.29180
25 +: $ 24.31600
100 +: $ 22.79630
250 +: $ 21.27650
Stock 757Can Ship Immediately
$ 30.93
Specifications
Series: POWER MOS 7®
Part Status: Active
IGBT Type: PT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 128A
Power - Max: 543W
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
Current - Collector Cutoff (Max): 1.25mA
Input Capacitance (Cies) @ Vce: 7.04nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Supplier Device Package: ISOTOP®
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The APT75GP120JDQ3 is a three-phase IGBT module in a FullPak package from Fuji Electric Co. This product is an advanced power module which is suitable for motor drive applications and using in the medium and low voltage range. This power transistor module has several important features that make it an exceptional high-performance device.

Applications of APT75GP120JDQ3

The APT75GP120JDQ3 is a very versatile device with a wide range of applications including in motor drives, home appliances, AC control circuits, frequency converters, air-conditioning and refrigeration. It is also suitable for automotive, commercial and industrial applications.

The APT75GP120JDQ3 has been designed to handle high-power applications with ease. It is especially suited for use in energy efficient motor drives, where it can provide improved drive control, as well as reduced over-current and AC ripple current. In addition, the APT75GP120JDQ3 is capable of providing higher levels of output power with less power losses.

The APT75GP120JDQ3 is capable of providing motor drive applications in both medium and low voltage ranges. In addition, this device is suitable for use in a variety of motor control applications. This device can be used to control the speed, direction and torque of the motor in applications such as inverters, drives, compressors, pumps, conveyors and generators.

Working Principle of APT75GP120JDQ3

The APT75GP120JDQ3 utilizes a three-phase insulated gate bipolar transistor (IGBT) module. This module is composed of three IGBTs, each of which is connected to a gate drive circuit. The gate drive circuit provides the required gate-source drive voltages for each IGBT. The IGBTs are controlled by a single module, eliminating the need for multiple control signals.

The basic principle for the operation of the APT75GP120JDQ3 IGBT module is based on the principle of the metal-oxide semiconductor field effect transistor (MOSFET). A MOSFET is a device that can be used to control the electrical current by applying a voltage to the gate terminal. The IGBT also utilizes the same principle; however, the IGBT uses an insulated gate that is isolated from the source terminal. This allows the IGBT to operate with higher carrier concentration, allowing it to achieve higher levels of performance in a given power range.

The APT75GP120JDQ3 utilizes the principle of the metal-oxide semiconductor field effect transistor (MOSFET). This device takes advantage of the fact that when a voltage is applied to the gate terminal, the current flow between the source and drain terminals can be controlled. By controlling the current flow through the MOSFET, the module can be used to regulate the current in a given motor drive application. This module also utilizes gate-drive circuits, which provide the gate-source drive voltages for each IGBT.

Conclusion

In conclusion, the APT75GP120JDQ3 is a three-phase IGBT module from Fuji Electric Co. This device is suitable for a wide range of motor drive applications and is capable of providing higher levels of output power with less power losses. The APT75GP120JDQ3 utilizes the principle of the metal-oxide semiconductor field effect transistor (MOSFET) and gate-drive circuits, which provide the gate-source drive voltages for each IGBT.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "APT7" Included word is 40
Part Number Manufacturer Price Quantity Description
APT70GR65B Microsemi Co... 5.34 $ 19 IGBT 650V 134A 595W TO-24...
APT70GR65B2DU40 Microsemi Co... 5.75 $ 1000 INSULATED GATE BIPOLAR TR...
APT70GR120B2 Microsemi Co... 8.67 $ 1000 IGBT 1200V 160A 961W TO24...
APT75GN120B2G Microsemi Co... 10.12 $ 1000 IGBT 1200V 200A 833W TMAX...
APT75GN60LDQ3G Microsemi Co... 8.71 $ 1024 IGBT 600V 155A 536W TO264...
APT75GN120LG Microsemi Co... 12.04 $ 534 IGBT 1200V 200A 833W TO26...
APT75GP120B2G Microsemi Co... 19.0 $ 1000 IGBT 1200V 100A 1042W TMA...
APT75GN60B2DQ3G Microsemi Co... 0.0 $ 1000 IGBT 600V 155A 536W TO264...
APT75GN60BG Microsemi Co... -- 6 IGBT 600V 155A 536W TO247...
APT70GR120L Microsemi Co... 10.23 $ 3 IGBT 1200V 160A 961W TO26...
APT7F120B Microsemi Co... 5.73 $ 1000 MOSFET N-CH 1200V 7A TO-2...
APT77N60BC6 Microsemi Co... 11.32 $ 15 MOSFET N-CH 600V 77A TO-2...
APT75M50L Microsemi Co... 12.73 $ 18 MOSFET N-CH 500V 75A TO-2...
APT75DQ60BG Microsemi Co... -- 809 DIODE GEN PURP 600V 75A T...
APT75M50B2 Microsemi Co... 0.0 $ 1000 MOSFET N-CH 500V 75A T-MA...
APT7F80K Microsemi Co... 0.0 $ 1000 MOSFET N-CH 800V 7A TO-22...
APT70SM70B Microsemi Co... 0.0 $ 1000 POWER MOSFET - SICN-Chann...
APT70SM70J Microsemi Co... 0.0 $ 1000 POWER MOSFET - SICN-Chann...
APT70SM70S Microsemi Co... -- 1000 POWER MOSFET - SICN-Chann...
APT7M120B Microsemi Co... -- 1000 MOSFET N-CH 1200V 8A TO24...
APT75DQ120BG Microsemi Co... -- 525 DIODE GEN PURP 1.2KV 75A ...
APT75GP120JDQ3 Microsemi Co... 30.93 $ 757 IGBT 1200V 128A 543W SOT2...
APT75GP120J Microsemi Co... 28.76 $ 127 IGBT 1200V 128A 543W SOT2...
APT75GN120JDQ3 Microsemi Co... 22.97 $ 32 IGBT 1200V 124A 379W SOT2...
APT75GT120JRDQ3 Microsemi Co... 27.45 $ 8 IGBT 1200V 97A 480W SOT22...
APT75GT120JU2 Microsemi Co... 22.02 $ 26 IGBT 1200V 100A 416W SOT2...
APT70GR120JD60 Microsemi Co... 26.99 $ 15 IGBT 1200V 112A 543W SOT2...
APT70GR65B2SCD30 Microsemi Co... 0.0 $ 1000 INSULATED GATE BIPOLAR TR...
APT75GT120JU3 Microsemi Co... 17.39 $ 1000 POWER MOD IGBT 1200V 100A...
APT75DQ100BG Microsemi Co... 2.98 $ 1000 DIODE GEN PURP 1KV 75A TO...
APT77N60SC6 Microsemi Co... 10.03 $ 1000 MOSFET N-CH 600V 77A D3PA...
APT75F50L Microsemi Co... 11.58 $ 1000 MOSFET N-CH 500V 75A TO-2...
APT75F50B2 Microsemi Co... -- 1000 MOSFET N-CH 500V 75A TO-2...
APT77N60JC3 Microsemi Co... 25.69 $ 208 MOSFET N-CH 600V 77A SOT-...
APT75GN120JDQ3G Microsemi Co... 0.0 $ 1000 IGBT 1200V 124A 379W SOT2...
APT75GN120J Microsemi Co... 0.0 $ 1000 IGBT 1200V 124A 379W SOT2...
APT70GR120J Microsemi Co... 0.0 $ 1000 IGBT 1200V 112A 543W SOT2...
APT75DL120HJ Microsemi Co... 14.92 $ 1000 MOD DIODE 1200V SOT-227Br...
APT75DF170HJ Microsemi Co... 18.85 $ 1000 MOD DIODE 1700V SOT-227Br...
APT75DL60HJ Microsemi Co... 0.0 $ 1000 MOD DIODE 600V SOT-227Bri...
Latest Products
APTGF150H120G

IGBT MODULE NPT FULL BRIDGE SP6IGBT Modu...

APTGF150H120G Allicdata Electronics
MWI80-12T6K

MOD IGBT SIXPACK RBSOA 1200V E1IGBT Modu...

MWI80-12T6K Allicdata Electronics
APTGT50A170T1G

IGBT MOD TRENCH PHASE LEG SP1IGBT Module...

APTGT50A170T1G Allicdata Electronics
APTGLQ50TL65T3G

POWER MODULE - IGBTIGBT Module Trench Fi...

APTGLQ50TL65T3G Allicdata Electronics
FT150R12KE3B5BOSA1

PWR MODULEIGBT Module

FT150R12KE3B5BOSA1 Allicdata Electronics
FZ900R12KF5NOSA1

POWER MOD IGBT 1200V A-IHM130-2IGBT Modu...

FZ900R12KF5NOSA1 Allicdata Electronics