PN4303_D26Z Allicdata Electronics
Allicdata Part #:

PN4303_D26Z-ND

Manufacturer Part#:

PN4303_D26Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 30V 625MW TO92
More Detail: JFET N-Channel 30V 625mW Through Hole TO-92-3
DataSheet: PN4303_D26Z datasheetPN4303_D26Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 6V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N4303
Description

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A JFET or junction field-effect transistor is a type of field-effect transistor that uses a biased p-n junction operating as a semiconductor switch or as a voltage-controlled resistor. The name "junction field effect transistor" was coined by Teal Agree of Donice Laboratories in 1967. PN4303_D26Z is a JFET that is commonly used due to its high input resistance, low noise and low power consumption.

The PN4303_D26Z is a high-performance, low-cost N-channel JFET that is specifically designed for high-frequency and low-noise applications such as signal conditioning, signal amplification, and driving circuits. It is a N-channel JFET with a flat-band voltage of 6V and an avalanche breakdown voltage of 8V. It has an input impedance of over 1GΩ and a DC current gain (hfe) of over 20. It has a frequency response range of 0.2 MHz to 400 MHz. The PN4303_D26Z is a highly reliable, hermetically sealed device that is available in a wide variety of packages.

The PN4303_D26Z is a perfect device for applications requiring high input impedance and low noise. It is ideal for buffer and driver applications. It is also well suited for applications that require low input/output capacitance and small voltage noise. It can be used to build low noise amplifiers, RF amplifiers, low level amplifiers and other types of active signal processing filters.

The PN4303_D26Z works by creating a barrier between a source and a drain within a device, utilizing a reverse-biased junction and two adjacent conductive electrodes. The source and drain form a transistor\'s active region, in which the gain of the current flowing from the source to the drain is determined by the gate potential and the applied bias (Voltage). An applied voltage on the gate, either Positive or Negative, modifies the current flowing through the device, thereby changing its operating characteristics.

The PN4303_D26Z JFET is an ideal device for many high frequency applications requiring high input impedances, low noise, and low power consumption. Its high input impedance makes it perfect for buffering and driving circuits, while its low noise and low power consumption make it ideal for use in high frequency and low level amplifiers. It is the perfect choice for applications such as signal conditioning, signal amplification, and driver circuits.

The specific data is subject to PDF, and the above content is for reference

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