APTGT150DA60T1G Allicdata Electronics
Allicdata Part #:

APTGT150DA60T1G-ND

Manufacturer Part#:

APTGT150DA60T1G

Price: $ 20.83
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT BOOST CHOP 600V 225A SP1
More Detail: IGBT Module Trench Field Stop Single 600V 225A 480...
DataSheet: APTGT150DA60T1G datasheetAPTGT150DA60T1G Datasheet/PDF
Quantity: 1000
100 +: $ 18.94070
Stock 1000Can Ship Immediately
$ 20.83
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 225A
Power - Max: 480W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 9.2nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Description

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APTGT150DA60T1G application field and working principle

An APTGT150DA60T1G is an Insulated Gate Bipolar Transistor (IGBT) module, which is used as a switching component in a wide range of applications. It is a high power device capable of operating at high voltage and high frequency, suitable for medium- and high-power switching applications. The device has two modes of operation: high-side and low-side, and both allow for switching current and power.

The APTGT150DA60T1G is mainly used in the following applications: Servo Motor Control, Variable Frequency Drives (VFDs), Uninterruptable Power Supplies (UPSs), Power Supplies, Motor Inverters, Motor Control Centers, and Automotive. It can also be used for switching current for a wide range of electrical loads, such as lighting, industrial equipment, and other power-driven applications. In addition, it can be used as an AC switch to drive DC loads.

The Working Principle of an APTGT150DA60T1G

The main component of the APTGT150DA60T1G is an insulated gate bipolar transistor (IGBT). An IGBT is a three-terminal semiconductor device which combines the properties of both a bipolar transistor and a field-effect transistor. The IGBT is a voltage-controlled device, meaning that the current flow is determined by the voltage applied to the gate. To turn on the IGBT, the voltage applied to the gate must be higher than the threshold voltage. To turn off the IGBT, the voltage applied to the gate must be lower than the threshold voltage. This switching feature makes the IGBT highly efficient for power switching applications.

The APTGT150DA60T1G also features a reliable protection against short-circuiting, over-current and over-voltage conditions. It is designed to provide a high switching speed, a low conduction loss, and an improved thermal performance. The rated collector-emitter voltage is up to 600V.

Conclusion

The APTGT150DA60T1G is an Insulated Gate Bipolar Transistor module which is used in a wide range of applications including motor control and power supply. The IGBT used in this module is highly efficient for power switching, and features a reliable protection against short-circuiting, over-current and over-voltage conditions. It is an ideal choice for a wide range of motor control and power supply applications.

The specific data is subject to PDF, and the above content is for reference

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