Allicdata Part #: | APTGT75A60T1G-ND |
Manufacturer Part#: |
APTGT75A60T1G |
Price: | $ 20.97 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT PHASE LEG TRENCH 600V SP1 |
More Detail: | IGBT Module Trench Field Stop Half Bridge 600V 100... |
DataSheet: | APTGT75A60T1G Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 19.05630 |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 100A |
Power - Max: | 250W |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 75A |
Current - Collector Cutoff (Max): | 250µA |
Input Capacitance (Cies) @ Vce: | 4.62nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP1 |
Supplier Device Package: | SP1 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
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Transistors - IGBTs - Modules
In recent decades, semiconductor devices have become increasingly essential components of electronics system. These devices are classified in order to efficiently describe the properties and characteristics of their respective devices. The APTGT75A60T1G falls under the category of transistors, IGBTs, and modules. As such, this article will discuss the application field and working principle of the APTGT75A60T1G.
APTGT75A60T1G Application Field
The APTGT75A60T1G is an Insulated Gate Bipolar Transistor (IGBT) module which is primarily used in applications requiring high-speed switching and high-power switching. The device is suitable for Motor Control, Inverter Control, Power Supplies, and Systems using power conversion systems. In addition, the APTGT75A60T1G is well-suited for applications in popular PLC and industrial control systems. The module also provides reliable and high-performance switching in transportation, renewable energy, and other field applications.
APTGT75A60T1G Working Principle
The APTGT75A60T1G is an IGBT module designed to switch between high-power and high-speed. The module uses the following technology to provide reliable and high-performance switching:
- Gate electrode: The device has a gate electrode the carries electrical current from the gate and onto the chip. The gate drives current onto the chip and creates a voltage-dependent electrical field in the region between the P and N-regions.
- Emitter electrode: The Emitter electrode serves as the source of and sink for weak electrical current. An insulated layer of silicon dioxide on the emitter increases the ability of the device to repel electrons and reduce current leakage.
- Base electrode: The base electrode is the point where electrons enter and leave the chip, controlling the amount of current that is sent through the device. This, in turn, controls the voltage across the device.
- Collector electrode: The Collector electrode of the APTGT75A60T1G is responsible for collecting any excess current that is not absorbed by the emitter.
When current flows in the APTGT75A60T1G, negative electrons are attracted to the positive voltage at the base electrode, which creates a depletion region until the voltage is balanced. In turn, this further affects the voltage of the collector electrode and the current flow through the device. This process is repeated until the device achieves the desired current throughput. As such, the device can be used to switch between high-power and high-speed electrical current, making it an ideal choice for various industrial applications.
Conclusion
The APTGT75A60T1G is an IGBT module that is well-suited for modern industrial applications. It is primarily used in applications requiring high-speed switching and high-power switching. The module uses a combination of gate, emitter, base and collector electrodes to control the current flow in order to switch between high-power and high-speed electrical current. As such, the device is an ideal choice for applications in popular PLC, industrial control systems, transportation and renewable energy.
The specific data is subject to PDF, and the above content is for reference
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