IXA30PG1200DHGLB Allicdata Electronics
Allicdata Part #:

IXA30PG1200DHGLB-ND

Manufacturer Part#:

IXA30PG1200DHGLB

Price: $ 11.56
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT PHASELEG 1200V 30A SMPD
More Detail: IGBT Array PT Half Bridge 1200V 43A 150W Surface M...
DataSheet: IXA30PG1200DHGLB datasheetIXA30PG1200DHGLB Datasheet/PDF
Quantity: 1000
45 +: $ 10.50000
Stock 1000Can Ship Immediately
$ 11.56
Specifications
Series: --
Part Status: Active
IGBT Type: PT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 43A
Power - Max: 150W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Current - Collector Cutoff (Max): 2.1mA
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-SMD Module
Supplier Device Package: ISOPLUS-SMPD™.B
Description

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The IXA30PG1200DHGLB is a part of IXYS Integrated Circuits (IIC) IGBT multiple-chip modules (MCMs). It is classified as a transistor array device and belongs to the IXAN family. It employs insulated gate bipolar transistors (IGBTs) to enhance its performance characteristics.

The IXA30PG1200DHGLB is made up of three IGBTs connected in parallel to increase the conduction capacity and gate voltage; configured in a half-bridge configuration that reduces the number of drive signals required and increases the switching speed. The module also includes a series of additional passive components to enhance electrical performance and facilitate the operation of the device.

The IXA30PG1200DHGLB is typically employed in power switching, DC-AC conversion, inversion, motor control and any application where IGBTs are required. It is also suitable for low voltage applications, such as AC motor control, lighting control and lighting ballast control.

The main features of the IXA30PG1200DHGLB and its associated components include high insulation voltage, low conduction losses and low gate current, wide range circuit protection, low switching and reset noise, fast turn-off and operating temperature range up to 150°C.

The primary operating principle of the IXA30PG1200DHGLB is based on the theory of insulated gate bipolar transistors (IGBTs). In this type of transistor, the gate is insulated from the emitter-base structure, allowing the gate and emitter to be controlled separately, resulting in higher switching speeds, lower power losses and improved energy efficiency. When the gate is driven by the appropriate voltage (typically 5 – 15V), the transistor acts as a switch and allows current to flow through the emitter-base junction.

The IXA30PG1200DHGLB is designed to minimize power losses and reduce power consumption, while providing reliable and robust operation in a wide range of applications. It uses insulated gate control to ensure the highest accuracy and response time. In addition, the device is capable of providing fast and stable turn-on and turn-off time, as well as fast frequency current control, which is critical for applications such as motor control.

In conclusion, the IXA30PG1200DHGLB is an insulated gate bipolar transistors (IGBTs) multiple-chip module (MCM) that provides high performance switching for a variety of applications. The device has a wide operating temperature range, fast switching speeds, and low gate current, which makes it suitable for a variety of power switching, DC-AC conversion, inversion, motor control and lighting control applications.

The specific data is subject to PDF, and the above content is for reference

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