| Allicdata Part #: | IHD10N60RA-ND |
| Manufacturer Part#: |
IHD10N60RA |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | IGBT 600V 20A 110W TO252-3 |
| More Detail: | IGBT Trench 600V 20A 110W Surface Mount PG-TO252-3 |
| DataSheet: |  IHD10N60RA Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | TrenchStop® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| IGBT Type: | Trench |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| Current - Collector (Ic) (Max): | 20A |
| Current - Collector Pulsed (Icm): | 30A |
| Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 10A |
| Power - Max: | 110W |
| Switching Energy: | 270µJ |
| Input Type: | Standard |
| Gate Charge: | 62nC |
| Td (on/off) @ 25°C: | -/170ns |
| Test Condition: | 400V, 10A, 23 Ohm, 15V |
| Operating Temperature: | -40°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | PG-TO252-3 |
Description
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IHD10N60RA is a top of the line semiconductor module from International Rectifier that features a 6 ampere IGBT in the integrated half-bridge package. This device is well suited for numerous applications, such as motor control, adjustable speed drives and consumer electronics. Its unique design and packaging capabilities make it the ideal choice for power applications where high power is required.The IHD10N60RA consists of two separate devices, the insulated gate bipolar transistors (IGBT) and the diode. The IGBTs are the main power switching devices, while the diodes are used to provide protection against reverse polarity and inductive load spikes. The combination of the IGBTs and the diodes make the IHD10N60RA an effective package for high power applications.The IHD10N60RA is designed to be operated in the “flyback” mode, where the IGBTs are used to control the flyback voltage. This voltage is generated when the IGBTs are switched off, allowing for a precise level of energy storage. The IGBTs are then turned on to produce the desired output voltage. The IGBTs can also be used in the “plateau” mode, where one IGBT is switched on while the other is delayed. This mode provides more precise control of the output voltage.The IGBTs used in the IHD10N60RA are fabricated using a patented planar technology, which allows for higher current capacity. The IGBTs are also capable of switching at high speeds, making them suitable for high frequency applications. The IGBTs used in the IHD10N60RA feature very high switching rates and low thermal resistance. This makes them ideal for high power applications, as they can handle large current loads without producing excessive amounts of heat.The IHD10N60RA is designed to be operated on a single phase power supply, allowing for compatibility with most existing power systems. The device’s low on-state voltage drop and low power dissipation make it ideal for use in applications such as motor control, adjustable speed drives and consumer electronics. As an integrated package, the IHD10N60RA can provide quality performance and reliability in any application.The IHD10N60RA is a versatile device that is suitable for a wide range of applications. Its features make it suitable for use in high power applications such as motor control, adjustable speed drives and consumer electronics. Its ability to switch at high speeds and low power dissipation make it an effective device for applications where high power is required. The unique packaging and design of the IHD10N60RA make it a great choice for use in power applications where high power is needed.
The specific data is subject to PDF, and the above content is for reference
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