APTGT75H60T3G Allicdata Electronics
Allicdata Part #:

APTGT75H60T3G-ND

Manufacturer Part#:

APTGT75H60T3G

Price: $ 30.82
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT MOD TRENCH FULL BRIDGE SP3
More Detail: IGBT Module Trench Field Stop Full Bridge Inverter...
DataSheet: APTGT75H60T3G datasheetAPTGT75H60T3G Datasheet/PDF
Quantity: 1000
100 +: $ 28.01780
Stock 1000Can Ship Immediately
$ 30.82
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Power - Max: 250W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 4.62nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Description

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Transistors - IGBTs - Modules

The APTGT75H60T3G is an insulated gate bipolar transistor (IGBT) module designed for power switching applications. The device is a module that consists of one full bridge high voltage switch which contains four IGBT dies in a single package. These IGBT dies are connected in series and provide bi-directional power switching and higher current capability. This module is suitable for applications such as renewable energy systems, power conversion solutions, and motor drives.

The APTGT75H60T3G offers several key benefits making it suitable for demanding applications. First, its high voltage rating of 600 V allows it to tolerate voltages that are beyond the continuously operating voltage of conventional IGBTs. This allows the device to be used in applications that are operating at high voltages. Second, its average output current of 75 A is capable of providing higher current capability than traditional IGBTs. Third, its high frequency capabilities make it suitable for applications that require fast switching speeds.

In addition to the higher current rating and higher voltage rating, the device also offers full protection against voltage spikes and current surges. This ensures the device’s reliability in the long term and makes it suitable for tough and demanding applications. The device also features a low inductance design which reduces EMI interference.

In terms of working principle, the APTGT75H60T3G is a four die module based on IGBT technology. This device uses a number of transistors and diodes connected in series to provide higher current and voltage capability, in addition to bi-directional switching. When the gate voltage is applied to the devices, the power flows from the anode to the cathode and the voltage and current ratings can be adjusted by varying the gate voltage.

The main advantage of this device is its rugged design which makes it suitable for long-term operation in harsh environments. This, in combination with the high voltage and current ratings, makes the device suitable for industrial applications such as renewable energy systems, power conversion solutions, and motor drives.

The APTGT75H60T3G is a versatile device and can be used in a wide range of applications. Its rugged design, in addition to its higher voltage and current ratings, allows the device to be used in highly demanding applications. The device is also capable of operating at high frequencies and offers full protection from voltage spikes and current surges. All of these features make the APTGT75H60T3G an ideal choice for any application that needs high performance power switching.

The specific data is subject to PDF, and the above content is for reference

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