Allicdata Part #: | APTGL40H120T1G-ND |
Manufacturer Part#: |
APTGL40H120T1G |
Price: | $ 31.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOD IGBT 1200V 65A SP1 |
More Detail: | IGBT Module Trench Field Stop Full Bridge 1200V 65... |
DataSheet: | APTGL40H120T1G Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 28.17670 |
Specifications
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Full Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 65A |
Power - Max: | 220W |
Vce(on) (Max) @ Vge, Ic: | 2.25V @ 15V, 35A |
Current - Collector Cutoff (Max): | 250µA |
Input Capacitance (Cies) @ Vce: | 1.95nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP1 |
Supplier Device Package: | SP1 |
Description
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Introduction
The APTGL40H120T1G is a module-based IGBT (Insulated Gate Bipolar Transistor) designed with a bipolar junction transistor (BJT) power semiconductor switch on the same body. It was developed to meet the needs of modern high-power and high-voltage applications. This device is part of STMicroelectronics\' range of high performance power semiconductor components.Application Fields
The APTGL40H120T1G is suitable for a broad range of applications including high voltage, high current and high reliability. It is especially suited for power switchgear applications such as traction inverters, UPS, welding machines as well as industrial and household AC motor drives. This device is also suitable for high power applications such as power supplies and renewable energy systems, as well as motor control systems, such as AC and DC servo motors.Working Principle
The APTGL40H120T1G works by acting as a voltage amplifier, which controls the current flow through the device by varying the amount of voltage applied to the gate terminal. When the gate voltage is increased, the current flow through the device increases. When the gate voltage is decreased, the current flow decreases. This type of operation is referred to as "voltage control." The APTGL40H120T1G also has a "low-side" and "high-side" operation. The low-side operation is used to control loads that require a negative voltage, while the high-side operation is used to control loads that require a positive voltage.When in operation, the APTGL40H120T1G works by creating an electric current through a semiconductor device. It consists of a P-N junction in which current flows between a P-type region and an N-type region. The current through the device is controlled by the voltage applied to the gate terminal. The gate voltage is applied to the P-type region and creates a current through the device. This current flows from the P-type region to the N-type region and the amount of current is dependent on the amount of gate voltage applied.The APTGL40H120T1G also has a built-in "crowbar" circuit which is used to protect the device from overvoltage. The crowbar circuit is triggered when the voltage across the IGBT reaches a certain level, causing the current to be diverted from the IGBT to a diode which allows the current to flow away from the device, protecting it from overvoltage.Conclusion
The APTGL40H120T1G is a high-performance IGBT device which is suitable for a variety of applications including high voltage, high current and high reliability applications. It is designed with a bipolar junction transistor power semiconductor switch and a built-in crowbar circuit which helps to protect the device from overvoltage. The APTGL40H120T1G can be used in a variety of applications such as power switchgear, power supplies, renewable energy systems, and motor control systems.The specific data is subject to PDF, and the above content is for reference
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