EPC2038 Discrete Semiconductor Products |
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Allicdata Part #: | 917-1138-2-ND |
Manufacturer Part#: |
EPC2038 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | EPC |
Short Description: | TRANS GAN 100V 2.8OHM BUMPED DIE |
More Detail: | N-Channel 100V 500mA (Ta) Surface Mount Die |
DataSheet: | EPC2038 Datasheet/PDF |
Quantity: | 180000 |
Series: | eGaN® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 500mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 3.3 Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.044nC @ 5V |
Vgs (Max): | +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: | 8.4pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Die |
Package / Case: | Die |
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EPC2038 is a popular power field effect transistor (FET) developed by Efficient Power Conversion Corporation (EPC). It is a single-ended, walk-off (derating) power FET that can handle up to 20V at 4A. The EPC2038 is designed for high efficiency, low gate charge, and provides a low on-resistance for a wide range of gate drive voltages. It is suitable for switching applications, power conversion, and power management.
The EPC2038 is a compromise between an insulated-gate bipolar transistor (IGBT) and a MOSFET. It is a relatively new type of transistor that combines the best of both worlds in terms of switching performance and cost. The EPC2038 has a much lower maximum voltage and current than an IGBT, but it has the same low gate charges and low on-resistance.
The EPC2038 works by combining a MOSFET-like vertical conductive channel with an IGBT-like lateral channel. This combination allows for both a lower on-resistance and higher breakdown voltage compared to a traditional MOSFET. The EPC2038 also has a much lower gate charge than an IGBT, which allows it to switch faster with less power loss.
The EPC2038 has a wide range of applications, including power conversion, power management, and switching applications. It can be used in devices such as motor drives and converters, magnetic resonance imaging (MRI) machin, and AC/DC and DC/DC applications. The EPC2038 is also suitable for automotive and military applications because of its low gate charge and low on-resistance.
The EPC2038 works by using what is called the “depletion mode” of operation. This is where the voltage between the drain and the source is such that the channel between them is partially depleted, thereby limiting the amount of current allowed to flow. The depletion mode limits the amount of current that can flow through the device, making it suitable for power conversion and management tasks.
In addition, the EPC2038 has a low on-resistance which helps reduce power losses in the device. The low gate charge also helps reduce switching times and losses, making it more efficient to use than traditional MOSFETs. It can handle up to 20V at 4A, making it suitable for use in higher voltage applications.
The EPC2038 is designed for high efficiency, low gate charge, and provides a low on-resistance for a wide range of gate drive voltages. It is suitable for switching applications, power conversion, power management, and can be used in devices such as motor drives and converters, magnetic resonance imaging (MRI) machin, and AC/DC and DC/DC applications. The EPC2038 also has a low gate charge and low on-resistance, which helps reduce power losses in the device and makes it suitable for use in higher voltage applications.
The specific data is subject to PDF, and the above content is for reference
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