EPC2014C Allicdata Electronics

EPC2014C Discrete Semiconductor Products

Allicdata Part #:

917-1082-2-ND

Manufacturer Part#:

EPC2014C

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: EPC
Short Description: TRANS GAN 40V 10A BUMPED DIE
More Detail: N-Channel 40V 10A (Ta) Surface Mount Die Outline ...
DataSheet: EPC2014C datasheetEPC2014C Datasheet/PDF
Quantity: 77500
Stock 77500Can Ship Immediately
Specifications
Series: eGaN®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 20V
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die Outline (5-Solder Bar)
Package / Case: Die
Description

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EPC2014C is the latest high-power and high-efficiency monolithic single-ended enhancement-mode (normally-off) gallium nitride (GaN) field-effect transistor (FET). This device has a variety of applications, ranging from smart grid applications to telecom switch modes, and is a widely used semiconductor device.

The device’s performance is based on its ability to be switched on with gate voltage, and for which no gate current is required. The rear drain current flows through a low resistive body-to-drain junction, so that a high electrical field can be set at the drain. This combination of high gate voltage and low gate current makes the EPC2014C very efficient, allowing for high voltages and high currents for a wide range of applications.

The EPC2014C works by using metal-oxide-semiconductor (MOS) transistors technology to ensure efficient transfer and operation at high currents. The device has an isolated source terminal with an integrated isolated gate driver. The gate driver supplies the gate voltage at a voltage level of up to 18V and a peak current of up to 2.5A. The gate voltage of the device can be applied to the drain with an external resistor. This allows the device to be operated at a voltage up to 110V and up to 800W.

The EPC2014C is also designed to be compatible with a variety of external components and is available in various packages for easy integration into existing systems. The device can be used for high power factoring, high frequency switching and high efficiency converter applications. The device includes several protection features such as over temperature protection, over current protection and over voltage protection, and also includes a dedicated shutdown pin.

The EPC2014C is a high-power monolithic single-ended enhancement-mode normally-off GaN FET with wide applications, superior efficiency and high reliability. It operates at high temperatures, high currents and high voltages, and provides protection features as well as easy integration into existing systems. The device is designed to be reliable, cost efficient and can be used for applications ranging from smart grid to telecom switch modes.

The specific data is subject to PDF, and the above content is for reference

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