BLP10H610AZ Discrete Semiconductor Products |
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Allicdata Part #: | 568-12809-2-ND |
Manufacturer Part#: |
BLP10H610AZ |
Price: | $ 14.84 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 104V 22DB 12VDFN |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 50V 60mA 860... |
DataSheet: | BLP10H610AZ Datasheet/PDF |
Quantity: | 1140 |
60 +: | $ 13.49460 |
120 +: | $ 12.06580 |
300 +: | $ 11.51010 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 860MHz |
Gain: | 22dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 60mA |
Power - Output: | 10W |
Voltage - Rated: | 104V |
Package / Case: | 12-VDFN Exposed Pad |
Supplier Device Package: | 12-HVSON (6x5) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BLP10H610AZ is a type of radio frequency (RF) Field Effect Transistor (FET). It is a voltage-controlled semiconductor device which is typically used in low-noise amplifiers, power amplifiers, and other analog applications. The BLP10H610AZ is a preferred choice due to its high gain, low-noise performance, and low-power consumption.
The BLP10H610AZ features a basic two-terminal design, with the source terminal being the input and the drain terminal being the output. It is composed of a pair of back-to-back p-type and n-type transistors connected in a cascode structure. This allows the device to have improved linearity and gain without sacrificing power. The device also has a built-in gate protection circuit, making it extremely rugged and suitable for high-voltage applications.
The BLP10H610AZ is often used in wide-dynamic-range amplifiers because of its wide input and output impedance ranges, which allow the device to accommodate a variety of load and source impedances. It is an ideal choice for mobile phone, wireless communication, and satellite applications. Additionally, the device is popular in automotive and medical applications due to its high linearity and robust construction.
The working principle of the BLP10H610AZ is relatively simple, and is based on the principle of a Field Effect Transistor. The device is composed of two layers of opposite-type semiconductor material, with the p-type material being the source and the n-type material being the drain. A continuous electric field is established between these two layers. When a voltage is applied between the gate and the source, it creates an electric field that is perpendicular to the field between the source and the drain. This modifies the conductivity of the channel, which can be adjusted by varying the gate voltage. When the gate voltage is increased, the conductivity of the channel is increased, allowing more current to flow from source to drain. When the gate voltage is decreased, the conductivity of the channel is decreased, resulting in a decrease in current.
In conclusion, the BLP10H610AZ is a type of radio frequency Field Effect Transistor, and is often used in low-noise amplifiers, power amplifiers, and other analog applications. Its wide input and output impedance ranges make it an ideal choice for high-voltage and wide-dynamic-range applications. The device operates on the principle of a Field Effect Transistor, in which a gate voltage is applied between the source and the drain to modify the conductivity of the channel.
The specific data is subject to PDF, and the above content is for reference
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