DF200R12W1H3FB11BOMA1

Series:	EasyPACK™
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	30A
Power - Max:	20mW
Vce(on) (Max) @ Vge, Ic:	1.45V @ 15V, 30A
Current - Collector Cutoff (Max):	1mA
Input Capacitance (Cies) @ Vce:	6.15nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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<p>DF200R12W1H3FB11BOMA1 is an Insulated Gate Bipolar Transistor (IGBT) module consisting of a body, a gate and a collector.</p><p>It is a popular choice for applications that require high speed switching, efficient heat management, low on-resistance and high temperature operation. IGBT modules are capable of handling high current with fast switching speeds and low power losses.</p><p>IGBTs are widely used in various industries such as wind power, solar energy, automotive and railway, industrial automation and robotics, lighting, and power supplies. They are also used in switching power supplies, induction heating, and UPS systems. The main application of IGBTs is as an alternative to traditional thyristors in the power control of energy systems.</p><p>The DF200R12W1H3FB11BOMA1 is designed with IGBT technology to provide a fast and reliable power control module. The module is designed to operate at a maximum voltage of 1200v and a peak current of 600A. The device provides superior power and performance. It is also efficient, providing minimal power losses and fast switching times.</p><p>The working principle of an IGBT module is based on the characteristics of a normal bipolar transistor, where an electric field is applied to the gate to control the voltage drop across the collector-emitter junction. This in turn controls the current within the transistor.</p><p>When the gate voltage reaches a certain threshold, the IGBT is triggered and the current flows through the collector-emitter junction, providing a low on-resistance and high switching speed. The IGBTs can then be used to control the voltage and current of a power circuit.</p><p>The DF200R12W1H3FB11BOMA1 is a reliable and efficient choice for applications requiring fast switching speeds, low power losses and high temperature operation. The device is a popular choice for applications such as power supplies, induction heating, and UPS systems.</p>

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