BF1105R,215 Allicdata Electronics

BF1105R,215 Discrete Semiconductor Products

Allicdata Part #:

568-12530-2-ND

Manufacturer Part#:

BF1105R,215

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH 7V 30MA SOT-143R
More Detail: RF Mosfet N-Channel Dual Gate 5V 800MHz 20dB SOT...
DataSheet: BF1105R,215 datasheetBF1105R,215 Datasheet/PDF
Quantity: 3000
3000 +: $ 0.09667
6000 +: $ 0.09044
15000 +: $ 0.08420
30000 +: $ 0.08295
Stock 3000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: N-Channel Dual Gate
Frequency: 800MHz
Gain: 20dB
Voltage - Test: 5V
Current Rating: 30mA
Noise Figure: 1.7dB
Power - Output: --
Voltage - Rated: 7V
Package / Case: SOT-143R
Supplier Device Package: SOT-143R
Base Part Number: BF1105
Description

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Modern transistor technology has revolutionized the electronics industry, enabling the manufacture of smaller, more reliable electronic components that consume less power and are able to handle higher frequencies. Among these is the BF1105R,215, a silicon field effect transistor (FET) used for radiofrequency (RF) applications. This article will explain the working principles and applications of this device.

What is a FET? FETs (field effect transistors) are a type of transistor that regulate the flow of electric current in a circuit by manipulating the electric field created by a gate voltage. They are much smaller and more efficient than the bipolar transistors used in many traditional circuits. They can also be used for switching applications or for amplifying signals.

How does the BF1105R,215 work?The BF1105R,215 is a type of FET called a MOSFET (metal oxide semiconductor field effect transistor). It uses a gate voltage to control the flow of current through its drain and source terminals. The gate voltage will determine the voltage potential between the drain and source; if the gate voltage is high, the drain-source potential will be much lower, and vice versa. This allows for precise control of the amount of current flowing through the device.

RF ApplicationsThe BF1105R,215 is designed for radiofrequency (RF) applications, meaning that it can be used for switching, amplifying, or modulating an RF signal. Because of its small size and high speed, it is ideal for use in RF circuits. Furthermore, its low power consumption makes it suitable for portable applications. It can also be used in high frequency circuits such as satellite communication systems and transmitters.

ConclusionThe BF1105R,215 is a silicon MOSFET designed for radiofrequency applications. It uses a gate voltage to control the current between its drain and source terminals, and its small size and low power consumption make it ideal for RF circuits. The device can be used for switching, amplifying, or modulating an RF signal, and can be used in satellite communication systems and transmitters.

The specific data is subject to PDF, and the above content is for reference

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