BF1105R,215 Discrete Semiconductor Products |
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Allicdata Part #: | 568-12530-2-ND |
Manufacturer Part#: |
BF1105R,215 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 7V 30MA SOT-143R |
More Detail: | RF Mosfet N-Channel Dual Gate 5V 800MHz 20dB SOT... |
DataSheet: | BF1105R,215 Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.09667 |
6000 +: | $ 0.09044 |
15000 +: | $ 0.08420 |
30000 +: | $ 0.08295 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | N-Channel Dual Gate |
Frequency: | 800MHz |
Gain: | 20dB |
Voltage - Test: | 5V |
Current Rating: | 30mA |
Noise Figure: | 1.7dB |
Power - Output: | -- |
Voltage - Rated: | 7V |
Package / Case: | SOT-143R |
Supplier Device Package: | SOT-143R |
Base Part Number: | BF1105 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Modern transistor technology has revolutionized the electronics industry, enabling the manufacture of smaller, more reliable electronic components that consume less power and are able to handle higher frequencies. Among these is the BF1105R,215, a silicon field effect transistor (FET) used for radiofrequency (RF) applications. This article will explain the working principles and applications of this device.
What is a FET? FETs (field effect transistors) are a type of transistor that regulate the flow of electric current in a circuit by manipulating the electric field created by a gate voltage. They are much smaller and more efficient than the bipolar transistors used in many traditional circuits. They can also be used for switching applications or for amplifying signals.
How does the BF1105R,215 work?The BF1105R,215 is a type of FET called a MOSFET (metal oxide semiconductor field effect transistor). It uses a gate voltage to control the flow of current through its drain and source terminals. The gate voltage will determine the voltage potential between the drain and source; if the gate voltage is high, the drain-source potential will be much lower, and vice versa. This allows for precise control of the amount of current flowing through the device.
RF ApplicationsThe BF1105R,215 is designed for radiofrequency (RF) applications, meaning that it can be used for switching, amplifying, or modulating an RF signal. Because of its small size and high speed, it is ideal for use in RF circuits. Furthermore, its low power consumption makes it suitable for portable applications. It can also be used in high frequency circuits such as satellite communication systems and transmitters.
ConclusionThe BF1105R,215 is a silicon MOSFET designed for radiofrequency applications. It uses a gate voltage to control the current between its drain and source terminals, and its small size and low power consumption make it ideal for RF circuits. The device can be used for switching, amplifying, or modulating an RF signal, and can be used in satellite communication systems and transmitters.
The specific data is subject to PDF, and the above content is for reference
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