Allicdata Part #: | APTGT150SK170G-ND |
Manufacturer Part#: |
APTGT150SK170G |
Price: | $ 58.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1700V 250A 890W SP6 |
More Detail: | IGBT Module Trench Field Stop Single 1700V 250A 89... |
DataSheet: | APTGT150SK170G Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 52.76190 |
Specifications
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 250A |
Power - Max: | 890W |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 150A |
Current - Collector Cutoff (Max): | 350µA |
Input Capacitance (Cies) @ Vce: | 13.5nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP6 |
Supplier Device Package: | SP6 |
Description
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APTGT150SK170G Applications and Working Principles
The APTGT150SK170G is a type of insulated gate bipolar transistor (IGBT) module. It is a discrete semiconductor component which combines an IGBT, an anti-parallel reverse-conducting diode, and a unique module package. This type of IGBT module offers superior power cycling performance and higher efficiency than other IGBT packages.Applications
The APTGT150SK170G is mainly used for applications such as motor drives, power supplies, and home appliances. This type of IGBT module is commonly used in applications where high efficiency and high power cycling performance are required. It can be used as a direct parallel IGBT, as a half-bridge port, as a three-phase inverter, as a three-phase converter, or as an inverter-rectifier combination. Due to its superior power cycling performance and higher efficiency, it is an ideal choice for applications with moderate to high power requirements.Working Principle
As an IGBT module, the APTGT150SK170G works like a power switch. Its working principle is based on the combination of a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and a bipolar transistor. The MOSFET is used as a driver while the bipolar transistor acts as a controlled current path switch. The IGBT module allows for a higher illuminance and load current than other types of IGBTs.When the device is turned on, the switch is in the “on” state, allowing a current path between the gate and the collector. This current path causes the voltage at the gate to drop. At the same time, the voltage across the collector-emitter junction increases, allowing current to flow from collector to emitter. The device remains on until the switch is turned off, in which case the current path between the gate and collector is cut off and the voltage at the gate rises, turning the switch off.Conclusion
The APTGT150SK170G is a type of IGBT module which offers superior power cycling performance and higher efficiency than other IGBT packages. Its working principle is based on the combination of a MOSFET and a bipolar transistor and is mainly used for applications such as motor drives, power supplies, and home appliances. It can be used as a direct parallel IGBT, as a half-bridge port, as a three-phase inverter, as a three-phase converter, or as an inverter-rectifier combination.The specific data is subject to PDF, and the above content is for reference
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