DF200R12KE3HOSA1

Series:	--
Part Status:	Active
IGBT Type:	--
Configuration:	Single
Voltage - Collector Emitter Breakdown (Max):	1200V
Power - Max:	1040W
Vce(on) (Max) @ Vge, Ic:	2.15V @ 15V, 200A
Current - Collector Cutoff (Max):	5mA
Input Capacitance (Cies) @ Vce:	14nF @ 25V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 125°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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DF200R12KE3HOSA1 Application Field and Working Principle

DF200R12KE3HOSA1 is a high-power semiconductor module belonging to a class of components known as insulated gate bipolar transistors (IGBTs). It is designed for use in a variety of power management applications, requiring the conversion of electrical energy in some form of electrical power.IGBTs are power semiconductor components that combine the properties of a bipolar junction transistor (BJT) with the controllability of a power MOSFET. The two devices are connected in a manner that produces what is known as a "co-packaged" solution. This means it is possible to perform highly efficient power conversions over a wide range of temperatures and voltages with far lower losses than with other forms of power semiconductor devices.IGBTs are often used in high power applications such as automation, motor control, robotics, and inverter-based systems. The DF200R12KE3HOSA1 module is described as a "low loss", "high throughput" IGBT solution designed for the high switching frequencies needed by these types of applications.The DF200R12KE3HOSA1 module consists of a 650V NPT IGBT chip, connected to a heat sink via a clip-on adhesive tab. It is designed to perform efficient energy conversion through the use of its transistor-style output voltage as well as its clamping levels for improved noise immunity. Its design also facilitates high-speed switching, making it well suited for applications requiring fast response times.The working principle of the DF200R12KE3HOSA1 module is based on the principle of current conduction between an emitter and a collector, passing through the base of the transistor-like structure. When voltage is applied between the emitter and collector, current flows through the device. When a higher voltage is applied between the base and collector, this is referred to as "positive base current conduction", and the transistor is said to be in the "on" state.When voltage is removed from the device, it is effectively in the "off" state, where no conduction occurs. This is referred to as "negative base current conduction", and is a crucial element of the DF200R12KE3HOSA1 module\'s design. This ability to regulate the current between an emitter and a collector is one of the main reasons why IGBTs are used in power management applications.In addition to its use in power management applications, the DF200R12KE3HOSA1 module is also suitable for use in the automotive, aerospace, industrial, and home appliance industries. It offers high levels of reliability and durability, as well as high performance and low power losses. As such, it is ideal for applications in which space and cost savings are paramount.In conclusion, the DF200R12KE3HOSA1 module is a useful and reliable IGBT solution applicable to a wide range of power management and other electrical applications. It combines the controllability of a power MOSFET with the bipolar switching characteristic of a BJT to create an efficient solution for power conversions. Additionally, it is designed to handle high switching frequencies and offers low power losses, making it a great choice for applications requiring high performance, reliability, and energy savings.

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