SI4431CDY-T1-GE3 Discrete Semiconductor Products

Series:	TrenchFET®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	32 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	38nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1006pF @ 15V
FET Feature:	--
Power Dissipation (Max):	2.5W (Ta), 4.2W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-SO
Package / Case:	8-SOIC (0.154", 3.90mm Width)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SI4431CDY-T1-GE3 is a device from the large family of metal oxide semiconductor field effect transistors (MOSFET). It is a type of single FET device, which is commonly used in multiple applications in the industry today. This type of device has a relatively simple design and function, but can be used in a variety of different applications, such as power management, RF power amplifiers, digital switch and pulse generators.The SI4431CDY-T1-GE3 uses a construction based on vertical double diffusion metal oxide semiconductor (VDMOS) architecture. It is capable of operating with a high voltage current, and is built to handle a maximum operating current at drain-source of 8.5A. This power device makes use of the standard Isolated Source MOSFET construction, which uses a single active cell to control the current. The active cell is made up of the drain, gate, and source region, and is used to control current flow by using the applied voltage.In addition to the power MOSFET device technology, the SI4431CDY-T1-GE3 also includes several other technologies in its design. These include an Integrated Source Shunt, a Low RDSon for improved efficiency, and a Low Threshold Voltage. The low threshold voltage allows for control of the power switch with a lower applied voltages, which can be used for improved power management solutions. The integrated source shunt prevents over-current protection and keeps power to the MOSFET device low. This helps to improve efficiency and reduce the heat generated.Overall, the SI4431CDY-T1-GE3 is a powerful and efficient power MOSFET device that can be used in a variety of applications. It is capable of handling high current drain and high voltage applications while providing improved power management solutions. It uses a single active cell design to control the current, and makes use of a variety of technologies to improve efficiency and reduce heat. This device is perfect for applications that require both efficient power management and high current drain.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description