Allicdata Part #: | APTGF300A120D3G-ND |
Manufacturer Part#: |
APTGF300A120D3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT MODULE NPT PHASE LEG D3 |
More Detail: | IGBT Module NPT Half Bridge 1200V 420A 2100W Chass... |
DataSheet: | APTGF300A120D3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | NPT |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 420A |
Power - Max: | 2100W |
Vce(on) (Max) @ Vge, Ic: | 3.7V @ 15V, 300A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 19nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -- |
Mounting Type: | Chassis Mount |
Package / Case: | D-3 Module |
Supplier Device Package: | D3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Insulated Gate Bipolar Transistors (IGBTs) modules, such as APTGF300A120D3G, are commonly used in applications that require high power and accuracy. These modules offer excellent performance in terms of most efficient and safe operation, as well as high speed, low losses and long life.
IGBT modules, such as APTGF300A120D3G, are utilized in a variety of applications ranging from consumer electronics to industrial automation. In particular, they are often found in applications such as electric vehicle traction systems, air conditioners and refrigerators, elevators, and wind turbines.
As compared to traditional transistors, Insulated Gate Bipolar Transistors (IGBTs) are much smaller and consume less energy. They also have a much higher efficiency and better power-to-weight ratio. Furthermore, they offer superior switching speed, higher current flow and better protection against overload and short-circuit events.
The working principle of APTGF300A120D3G insulated gate bipolar transistors (IGBT) module is simple. It is composed of an insulated gate, which acts as an insulation between the two electrodes. To switch them on and off, the gate is constantly supplied with an activation current. When the gate receives this activation current, it forms a low resistance channel between the two electrodes, allowing the current to flow.
The two electrodes, called collector and emitter, work together with the gate. When the gate is triggered, the electrons coming from the collector are repelled by the positive potential provided by the gate and then attracted to the negative potential of the emitter. As the electrons reach the emitter, they form a small current, which causes the conductive channel between the two electrodes. This process then switches the IGBT on.
APTGF300A120D3G insulated gate bipolar transistors (IGBT) module also has anti-parallel diodes between the collector and emitter. This ensures a safe circuit operation by preventing any surge or short circuit events. Furthermore, it also helps to reduce any energy losses that could occur while switching the module off.
APTGF300A120D3G IGBT modules offer superior performance, most efficient and safe operation, greater power-to-weight ratio, and improved protection against overload and short-circuit events. This makes them ideal for a wide range of applications, from industrial automation to air conditioners and refrigerators. They are also used in electric vehicle traction systems, elevators, and wind turbines. All of these factors make it easy to understand why this type of IGBT module is so popular in the market.
The specific data is subject to PDF, and the above content is for reference
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