Allicdata Part #: | APTGF300A120G-ND |
Manufacturer Part#: |
APTGF300A120G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | POWER MOD IGBT NPT PHASE LEG SP6 |
More Detail: | IGBT Module NPT Half Bridge 1200V 400A 1780W Chass... |
DataSheet: | APTGF300A120G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | NPT |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 400A |
Power - Max: | 1780W |
Vce(on) (Max) @ Vge, Ic: | 3.9V @ 15V, 300A |
Current - Collector Cutoff (Max): | 500µA |
Input Capacitance (Cies) @ Vce: | 21nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -- |
Mounting Type: | Chassis Mount |
Package / Case: | SP6 |
Supplier Device Package: | SP6 |
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The APTGF300A120G is a high voltage module designed to operate with the IGBT (Insulated Gate Bipolar Transistor) technology. This technology utilizes the combination of an insulated gate field effect transistor (IGFET) and a bipolar transistor in a single device, allowing for high use voltage, high switching speeds, and high-power transfer capability. The APTGF300A120G module is designed to provide a higher level of current and power densities than standard IGBT/DIODE modules.
APTGF300A120G modules are typically used in high-power switching applications, such as power supplies, motor drives, and lighting applications. These modules offer excellent transient performance, fast switching and turn-off, and low noise operation. The module includes two separate IGBT circuits for each power rail, providing enhanced performance and reliability. The package includes an integrated anti-parallel diode which facilitates fast reverse current operation. The module includes an integrated co-planar base plate which provides excellent heat transfer and improved thermal management.
The working principle of the APTGF300A120G is based on the combination of an insulated gate field effect transistor (IGFET) and a bipolar transistor. The IGFET is used as the main power switch, while the bipolar component helps to regulate the current. The switch is triggered by a gate signal which can be either positive or negative. The current through the gate is modulated based on the magnitude of the voltage applied to the gate. When the voltage on the gate is increased, the current is increased, thus allowing for high-power switching. The gate current is regulated by the diode and the circuit is protected against any reverse current flow.
The module also provides protection against short-circuiting, transients, and other fault conditions. When the module is exposed to a short-circuit or a transient, the module shuts off and resumes operation when the current drops below a predetermined level. Additionally, the APTGF300A120G is designed to provide superior switching frequency and offers both PWM and pulse-width modulation control. This module is also designed to reduce switching losses and provide excellent power efficiency by providing a controlled turn-on and turn-off current path.
In conclusion, the APTGF300A120G module is designed to provide superior high-power switching performance, excellent transient performance, and low noise operation. It is ideal for a wide range of switching applications, from motor drives to power supplies and lighting applications. The module utilizes an integrated IGBT/diode circuit and provides superior performance and protection against fault conditions. In addition, it provides superior switching frequency capabilities, allowing for PWM and pulse-width modulation control.
The specific data is subject to PDF, and the above content is for reference
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